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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap

Published online by Cambridge University Press:  10 February 2011

Joachim Krüiger ,
Noad Shapiro ,
Sudhir Subramanya ,
Yihwan Kim ,
Henrik Siegle ,
Piotr Perlin ,
Eicke R. Weber ,
William S. Wong ,
Timothy Sands  and
Nathan W. Cheung
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Joachim Krüiger
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Noad Shapiro
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Sudhir Subramanya
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Yihwan Kim
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Henrik Siegle
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Piotr Perlin
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Eicke R. Weber
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
William S. Wong
Affiliation:
Department of Materials Science, University of California at Berkeley Berkeley, California 94720, USA
Timothy Sands
Affiliation:
Department of Materials Science, University of California at Berkeley Berkeley, California 94720, USA
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720, USA
Richard J. Molnar
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173, USA
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Abstract

This paper analyses the influence of the sapphire substrate on stress in GaN epilayers in the temperature range between 4K and 600K. Removal of the substrate by a laser assisted liftoff technique allows, for the first time, to distinguish between stress and other material specific temperature dependencies. In contrast to the prevailing assumption in the literature, that the difference in the thermal expansion coefficients is the main cause for stress it is found that the substrate has a rather small influence in the examined temperature range. The measured temperature dependence of stress is in contradiction to the published values for the thermal expansion coefficients for sapphire and GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 289
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[Agel] Ager, J.W., et.al.; Mat.Res.Soc.Symp.Proc. 449, 775(1997)10.1557/PROC-449-775Google Scholar
[Buyll] Buyanova, I.A., et.al.; Appl.Phys.Lett. 69, 1255(1996)10.1063/1.117429Google Scholar
[Cod1] Cody, G.D.; in Hydrogenated Amorphous Silicon; ed. By J., Pankove, Semiconductors and Semimetals Vol. 21, Part b, Ch. 2, p. 11 (Academic, New York 1984)10.1016/S0080-8784(08)62910-5Google Scholar
[Edwl] Edwards, N.V., et.al.; Appl.Phys.Lett. 73, 2808(1998)10.1063/1.122597Google Scholar
[Heil] Heinke, H., et.al.; J. of Crystal Growth 189/190, 375 (1998)10.1016/S0022-0248(98)00316-9Google Scholar
[Herl] Herr, H., Alex, V., and Weber, J.; Mater. Res. Soc. Symp. Proc. 482, 719(1998).10.1557/PROC-482-719Google Scholar
[Kiel] Kisielowski, C. in Gallium Nitride II; Semiconductors and Semimetals Vol. 57, Ch. 7, p. 275(Academic, New York 1999)10.1016/S0080-8784(08)62620-4Google Scholar
[Krul] KrUger, J. et.al.; to be publishedGoogle Scholar
[Lesl] Leszczynski, M., et.al.; J. Appl.Phys. 76, 4909(1994)10.1063/1.357273Google Scholar
[Heal] Hearne, S., et.al.; Appl.Phys.Lett. 74, 356(1999)10.1063/1.123070Google Scholar
[Lanl] Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology, Springer, Berlin, 1982, Vol. 17b.Google Scholar
[Manl] Manasreh, M.O.; Phys.Rev.B. 53, 16425(1996)10.1103/PhysRevB.53.16425Google Scholar
[Moll] Molnar, R.J., et.al.; J. Crystal Growth 178, 147(1997)10.1016/S0022-0248(97)00075-4Google Scholar
[Monl] Monemar, B.; Phys.Rev.B. 10, 676(1974)10.1103/PhysRevB.10.676Google Scholar
[Mon2] Monemar, B., et.al.; MRS Internet J. Nitride Semicond. Res. 1, 2(1996)10.1557/S1092578300001745Google Scholar
[Sie1] Siegle, H., et.al.; MRS ‘99 Spring meeting; these proceedingsGoogle Scholar
[Sie2] Siegle, H., et.al.; Appl.Phys.Lett. 71, 2490(1997)10.1063/1.120097Google Scholar
[Sha1] Shan, W., et.al.; Appl.Phys.Lett. 66, 985(1995)10.1063/1.113820Google Scholar
[Varl] Varshni, Y.P., Physica 34, 149(1967)10.1016/0031-8914(67)90062-6Google Scholar
[Visl] Viswanath, A.K., et.al.; J. Appl.Phys. 84, 3848(1998)10.1063/1.368564Google Scholar
[Wonl] Wong, W. S., et.al.; Appl.Phys.Lett. 72, 599(1998)10.1063/1.120816Google Scholar