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Influence of Mechanical Stress on The Electrical Performance of Polycrystalline-Silicon Resistors

Published online by Cambridge University Press:  17 March 2011

M. Nakabayashi ,
H. Ohyama ,
E. Simoen ,
M. Ikegami ,
C. Claeys ,
K. Kobayashi ,
M. Yoneoka ,
Y. Takami ,
H. Sunaga  and
H. Takizawa
M. Nakabayashi
Affiliation:
Mitsubishi Electric Co., 997 Miyoshi Nishigoshi Kumamoto, 861-1197, Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Ikegami
Affiliation:
Mitsubishi Electric Co., 997 Miyoshi Nishigoshi Kumamoto, 861-1197, Japan
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Kobayashi
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
M. Yoneoka
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
Y. Takami
Affiliation:
Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-0101, Japan
H. Sunaga
Affiliation:
Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-1292, Japan
H. Takizawa
Affiliation:
Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-1292, Japan
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Abstract

Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films, doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped layers of 250 nm thickness, which were deposited by LPCVD at 620 °C on thermally oxidized silicon wafers. Film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2 × 1014 and 5.3 × 1014 cm−2, respectively. The Poly-Si films were annealed in a H2 ambient at 1000 °C for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers in order to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A29.3
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Wortman, J.J., Hauser, J. R., and Burger, R. M., J. Appl. Phys., 35, 2122 (1964).Google Scholar
2. Mikoshiba, H., Solid-State Electron., 24, 221 (1981).Google Scholar
3. Miyamoto, K., Nakagawa, O., Mitsuhashi, J., and Matsumoto, H.., Int. Rel. Phys. Symp., 51 (1986).Google Scholar
4. Inayoshi, H., Nishi, K., Okikawa, S., and Wakashima, Y., Int. Rel. Phys. Symp., 113 (1981).Google Scholar
5. Isagawa, M., Iwasaki, Y., and Sutoh, T., Int. Rel. Phys. Symp., 171 (1980).Google Scholar
6. Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., Int. Rel. Phys. Symp., 6 (1984).Google Scholar
7. Nakabayashi, M., Ikegami, M., and Daikoku, T., Jpn. J. Appl. Phys., 32, 3734 (1993).Google Scholar
8. Lu, N.C.-C., Gerzberg, L., Lu, C. Y., and Meindl, J. D., IEEE Trans. Electron Devices, 30, 137 (1983).Google Scholar
9. Mandurah, M. M. et al. , J. Appl. Phys. 51, 5755 (1980).Google Scholar