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Influence of Flow Dynamics on The Morphology of CVD Aluminum Thin Films

Published online by Cambridge University Press:  22 February 2011

Donna M. Speckman ,
Denise L. Leung  and
Jerry P. Wendt
Donna M. Speckman
Affiliation:
The Aerospace Corporation, Electronics Technology Center, P.O. Box 92957, Los Angeles, CA 90009
Denise L. Leung
Affiliation:
The Aerospace Corporation, Electronics Technology Center, P.O. Box 92957, Los Angeles, CA 90009
Jerry P. Wendt
Affiliation:
The Aerospace Corporation, Electronics Technology Center, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Aluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a low pressure CVD reactor system. A high TMAA flow rate during deposition, combined with an initial burst of added argon during the nucleation of the substrate surface resulted in the growth of aluminum thin films with excellent purity and surface morphologies. Film resistivities averaged 3.4 μΩ-cm, and the average surface peak-to-valley height for each film was found to be <4% of the film thickness. The surfaces of films with thicknesses of ≤ 1 μm were extremely smooth and reflective. In contrast, the use of a high alane flow rate in the absence of any added argon resulted in the growth of films with extremely textured surface morphologies. Furthermore, films grown using an argon carrier gas, but with a slow alane flow rate, exhibited both textured surface morphologies and whisker growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 283
Copyright
Copyright © Materials Research Society 1994

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References

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