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Inflimne of Dopant type and Conceintrtion on Hydrogen Diffusion in Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
We present a kinetic model for hydrogen diffusion and deactivation of shallow dopants incrystalline silicon which accounts for some of the effects of dopant type and concentration on observed deuterium profiles. The predictions of this model are in accord with recent Secondary Ion Mass Spectrometry (SIMS) profiles of deuterium in both n— and p—type silicon for a range of resistivities after passivation in a deuterium plasma. Dopant type and concentration effects are explained by assuming the presence of a charged species and by allowing for the formation of immobile deuterium molecules. The deuterium profiles are controlled by chargestate—mediated reactions which form deuterium molecules and pairs with shallow donors or acceptors. Earlier research has found that the hydrogen interstitial in silicon has a deep donor state in the band gap. The observed behavior of the deuterium profiles implies that the Fermi level passes through this donor state for a resistivity between 1 and 10 Q—cm in boron—doped material at 125 ºC; i.e. the state is at Ev + 0.30 ± 0.10 eV.
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- Copyright © Materials Research Society 1989
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