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Increased Uniformity of Silicon Needed for Critical Devices How Can We Improve the Float-Zone Process?

Published online by Cambridge University Press:  15 February 2011

Edward L. Kern
Edward L. Kern*
Affiliation:
Consultant, P.O. Box 913, Del Mar, California (92014) USD
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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 9 , 1981 , 445
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1.Kern, E.L., Yaggy, L.S. and Baker, J.A., Semiconductor Silicon 1977, Electrochemical Society, Princeton, N.J., 1977, p. 52.Google Scholar
2.“Float Zone Workshop”, Ed. Kern, E.L., NASA- Marshall Space Flight Center (to be published), (September, 1981).Google Scholar
3.Rava, P., Gatos, H.C. and Lagowski, J., Semiconductor Silicon 1981, Ed. Huff, H., Kriegler, R. and Takeishi, Y. (Electrochemical Society, Princeton, N.J.).Google Scholar
4.Graff, K., Hilgarth, J. and Neubrand, H., Semiconductor Silicon 1977, Ed. Huff, H. and Sirtl, E. (Electrochemical Society, Princeton, N.J.), p. 575.Google Scholar
5.Foll, H., Gosele, U. and Kolbesen, B., Semiconductor Silicon 1977, Ed. Huff, H. and Sirtl, E.. (Electrochemical Society, Princeton, N.J.), p. 565.Google Scholar
6.DeKock, A.J.R., Roksnoer, P.J. and Boonen, P.G.T., J. Crystal Growth 22, (1974) 311–20.Google Scholar
7.Vieweg-Gutberlet, F., “Local Distribrution of Oxygen in Silicon Single Crystals and Swirl Formation” International conf. on Lattice Defects in SemiconductorsFreiburg, W. Germany(July 1974), p. 22 – 25.Google Scholar
8.Kern, E.L., paper A–1, Conference on Preparation and Properties of Electronic Materials, A.I.M.E.Boston Mass(September 9, 1974).Google Scholar
9.Kamper, M., “A New Striation Etch for Silicon”, J. Electrochemical Society, 117 no. 2 (February 1970).Google Scholar