Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T12:07:02.307Z Has data issue: false hasContentIssue false
  • English
  • Français

InAs/In0.15Ga0.85As1−xNx quantum dots for 1.5 μm laser applications

Published online by Cambridge University Press:  01 February 2011

Mirja Richter ,
Benjamin Damilano ,
Jean Massies ,
Jean-Yves Duboz  and
Andreas D. Wieck
Mirja Richter
Affiliation:
[email protected], Ruhr-Universität Bochum, Angewandte Festkörperphysik, Universitätsstraße 150, Bochum, NRW, 44780, Germany, +49 234 32 27636
Benjamin Damilano
Affiliation:
[email protected]
Jean Massies
Affiliation:
[email protected]
Jean-Yves Duboz
Affiliation:
[email protected]
Andreas D. Wieck
Affiliation:
[email protected]
Get access

Abstract

Self-assembled InAs quantum dots (QDs) on GaAs substrate encapsulated with In0.15Ga0.85As1−xNx (GINA) have been grown by solid source molecular beam epitaxy, using optimal growth temperatures and rates for each of the two layers. The photoluminescence (PL) intensity increases for annealed samples. The optimum annealing temperature depends on the nitrogen composition. InAs QDs overgrown with larger nitrogen mole fraction GINA show a smaller PL peak blue-shift after annealing. Intense and narrow PL emission in the 1.5 µm range is achieved for samples annealed at optimal temperature.

Keywords

molecular beam epitaxy (MBE)Nannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-29
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fischer, M., Reinhardt, M., and Forchel, A., Electron. Lett. 36, 1208 (2000).Google Scholar
2. Jaschke, G., Averbeck, R., Geelhaar, L., and Riechert, H., J. Cryst. Growth 278, 224 (2005).Google Scholar
3. Hugues, M., Damilano, B., Barjon, J., Duboz, J.Y., Massies, J., Ulloa, J.M., Montes, M., and Hierro, A., Electron. Lett. 41, 595 (2005).Google Scholar
4. Li, L.H., Sallet, V., Patriarche, G., Largeau, L., Bouchoule, S., Merghem, K., Travers, L., and Harmand, J.C., Electron. Lett. 39, 519 (2003).Google Scholar
5. Bank, S.R., Wistey, M.A., Goddard, L.L., Yuen, H.B., Lordi, V., and Harris, J.S., IEEE J. Quantum Electron. 40, 656 (2004).Google Scholar
6. Gupta, J.A., Barrios, P.J., Zhang, X., Lapointe, J., Poitras, D., Pakulski, G., Wu, X., and Delage, A., Electron. Lett. 41, 1060 (2005).Google Scholar
7. Karachinsky, L. Ya., Kettler, T., Gordeev, N. Yu., Novikov, I.I., Maximov, M.V., Shernyakov, Yu.M., Kryzhanovskaya, N.V., Zhukov, A.E., Semenova, E.S., Vasil'ev, A.P., Ustinov, V.M., Ledentsov, N.N., Kovsh, A.R., Shchukin, V.A., Mikhrin, S.S., Lochmann, A., Schulz, O., Reissmann, L., and Bimberg, D., Electron. Lett. 41, 478 (2005).10.1049/el:20050536Google Scholar
8. Tansu, N., Yeh, J.Y., and Mawst, L.J., Appl. Phys. Lett. 83, 2512 (2003).Google Scholar
9. Sopanen, M., Xin, H.P., and Tu, C.W., Appl. Phys. Lett. 76, 994 (2000).Google Scholar
10. Egorov, A. Y., Bedarev, D., Bernklau, D., Dumitras, G., and Riechert, H., Phys. Stat. Sol. B 224, 839 (2001).Google Scholar
11. Ustinov, V.M., Egorov, A.Y., Odnoblyudov, V.A., Kryzhanovskaya, N.V., Musikhin, Y.G., Tsatsul'nikov, A.F., and Alferov, Z.I., J. Cryst. Growth 251, 388 (2003).Google Scholar
12. Pan, Z., Li, L.H., Zhang, W., Lin, Y.W., and Wu, R.H., Appl. Phys. Lett. 77, 1280 (2000).Google Scholar
13. Makino, S., Miyamoto, T., Ohta, M., Matsuura, T., Matsui, Y., and Koyama, F., Phys. Stat. Sol. C 0, No. 4, 1097 (2003).Google Scholar
14. Kitatani, T., Nakahara, K., Kondow, M., Uomi, K., and Tanaka, T., J. Cryst. Growth 209, 345 (2000).Google Scholar
15. Kurtz, S., Webb, J., Gedvilas, L., Friedman, D., Geisz, J., Olson, J., King, R., Joslin, D., and Karam, N., Appl. Phys. Lett. 78, 748 (2001).Google Scholar
16. Damilano, B., Barjon, J., Duboz, J.-Y., Massies, J., Hierro, A., Ulloa, J.-M., and Calleja, E., Appl. Phys. Lett. 86, 0711051 (2005).10.1063/1.1863433Google Scholar
17. Klar, P.J., Grunig, H., Koch, J., Schafer, S., Volz, K., Stolz, W., Heimbrodt, W., Kamal Saadi, A.M., Lindsay, A., and O'Reilly, E.P., Phys. Rev. B 64, 121203 (2001).Google Scholar
18. Mussler, G., Däweritz, L., and Ploog, K. H., Appl. Phys. Lett. 87, 081903 (2005).10.1063/1.2033135Google Scholar
19. Kim, K., and Zunger, A., Phys. Rev. Lett. 86, 2609 (2001).10.1103/PhysRevLett.86.2609Google Scholar
20. Ramsteiner, M., Jiang, D. S., Harris, J. S., and Ploog, K. H., Appl. Phys. Lett. 84, 1859 (2004).Google Scholar