Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-06T06:19:47.281Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Turn-Off Characteristics in ZnOTFT's by Introducing Hydrogen During MOCVD Growth

Published online by Cambridge University Press:  15 March 2011

Jungyol Jo ,
Ogweon Seo ,
Hyoshik Choi  and
Chan Bong Jun
Jungyol Jo
Affiliation:
Ajou University, Department of Electrical and Computer Engineering, Suwon, Korea
Ogweon Seo
Affiliation:
NFC, Samsung Advanced Institute of Technology, Suwon, Korea
Hyoshik Choi
Affiliation:
Ajou University, Department of Electrical and Computer Engineering, Suwon, Korea
Chan Bong Jun
Affiliation:
NFC, Samsung Advanced Institute of Technology, Suwon, Korea
Get access

Extract

Advantages of ZnO:

High Mobility < 10 cm2Vsec, enables larger pixel opening, safer operation compared to TFT-LCD based on amorphous Si.High current driving TFT, high speed data transfer.High optical transparency, direct, wide bandgap.Stable against water and oxygen, because already oxidized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1000: Symposium L – Functional Interfaces in Oxides , 2007 , 1000-L06-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)