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Improvement of Turn-Off Characteristics in ZnOTFT's by Introducing Hydrogen During MOCVD Growth

Published online by Cambridge University Press:  15 March 2011

Jungyol Jo
Affiliation:
Ajou University, Department of Electrical and Computer Engineering, Suwon, Korea
Ogweon Seo
Affiliation:
NFC, Samsung Advanced Institute of Technology, Suwon, Korea
Hyoshik Choi
Affiliation:
Ajou University, Department of Electrical and Computer Engineering, Suwon, Korea
Chan Bong Jun
Affiliation:
NFC, Samsung Advanced Institute of Technology, Suwon, Korea
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Extract

Advantages of ZnO:

High Mobility < 10 cm2Vsec, enables larger pixel opening, safer operation compared to TFT-LCD based on amorphous Si.High current driving TFT, high speed data transfer.High optical transparency, direct, wide bandgap.Stable against water and oxygen, because already oxidized.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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