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Improved Soi Films By High Dose Oxygen Implantation and Lamp Annealing
Published online by Cambridge University Press: 28 February 2011
Abstract
Ion beam synthesis of a buried SiO2 layer is an attractive silicon-on-insulator technology for high speed CMOS circuits and radiation hardened devices. We demonstrate here a new annealing procedure at 1405°C that produces silicon films of excellent quality, essentially free of oxygen precipitates and with sharp interfaces between the Si and the SiO2.
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- Copyright © Materials Research Society 1986
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