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Improved CdZnTe detectors grown by vertical Bridgman Process

Published online by Cambridge University Press:  10 February 2011

K. G. Lynn ,
M. Weber ,
H. L. Glass ,
J. P. Flint  and
Cs. Szeles
K. G. Lynn
Affiliation:
Dept. of Physics, Washington State University Pullman, WA 99164-2814
M. Weber
Affiliation:
Dept. of Physics, Washington State University Pullman, WA 99164-2814
H. L. Glass
Affiliation:
Johnson Matthey Electronics, Spokane, WA 99216
J. P. Flint
Affiliation:
Johnson Matthey Electronics, Spokane, WA 99216
Cs. Szeles
Affiliation:
eV Products division of II-VI, Inc., Saxonburg, PA 16056
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Abstract

The γ ray (57Co) and α particle (241Am) detector response of Cdl-xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Postgrowth processing was utilized to produce a high-resistivity material with improved chargecollection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the lowenergy tailing of the γ-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV γ-photon line in crystals with x=0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from 57Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 229
Copyright
Copyright © Materials Research Society 1998

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