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High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

Published online by Cambridge University Press:  01 February 2011

Tsuyoshi Sekitani ,
Shingo Iba ,
Yusaku Kato ,
Yoshiaki Noguchi ,
Takao Someya  and
Takayasu Sakurai
Tsuyoshi Sekitani
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Shingo Iba
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Yusaku Kato
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Yoshiaki Noguchi
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Takao Someya
Affiliation:
Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Takayasu Sakurai
Affiliation:
Center for Collaborative Research, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Abstract

We have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I1.9
Copyright
Copyright © Materials Research Society 2006

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References

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