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High-Quality, Smooth Fe3O4 Thin Films on Si By Controlled Oxidation of Fe in CO/CO2

Published online by Cambridge University Press:  17 May 2012

Fengyuan Shi ,
Hua Xiang ,
M. S. Rzchowski ,
Y. A. Chang  and
P.M. Voyles
Fengyuan Shi
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Hua Xiang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
M. S. Rzchowski
Affiliation:
Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
P.M. Voyles
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
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Abstract

We fabricated Fe3O4 thin films on TiN buffered Si by CO/CO2 oxidation at 160 °C. The easy saturation of the magnetization at high magnetic field and high resolution scanning transmission electron microscopy (HRSTEM) images show low defect density, smooth Fe3O4 thin films. Oxidation at 400 °C resulted in an undesirable second phase in between the TiN and the un-oxidized Fe, but changes in total gas pressure did not lead to a second phase. The crystal structure of this second phase is similar to Fe2TiO4 (ulvöspinel) from HRSTEM and STEM electron energy loss spectroscopy. Fe3O4 thin films grown at 160 °C follow a power law growth model with an exponent of 0.23±0.03.

Keywords

electron energy loss spectroscopy (EELS)scanning transmission electron microscopy (STEM)magnetic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e03-15
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Zhang, Z. and Satpathy, S., Physical Review B 44 (24), 13319 (1991).Google Scholar
2. Aoshima, K.-i. and Wang, S. X., Journal of Applied Physics 91 (10), 7146–7148 (2002).Google Scholar
3. Greullet, F., Snoeck, E., Tiusan, C., Hehn, M., Lacour, D., Lenoble, O., Magen, C. and Calmels, L., Applied Physics Letters 92 (5), 053508–053503 (2008).Google Scholar
4. Park, C., Jian-Gang, Z., Yingguo, P., Laughlin, D. E. and White, R. M., Magnetics, IEEE Transactions on 41 (10), 2691–2693 (2005).Google Scholar
5. Zhao, L. B., Mi, W. B., Jiang, E. Y. and Bai, H. L., journal article 91 (5), 052113 (2007).Google Scholar
6. Seneor, P., Fert, A., Maurice, J.-L., Montaigne, F., Petroff, F. and Vaurès, A., Applied Physics Letters 74 (26), 4017–4019 (1999).Google Scholar
7. Matsuda, H., Takeuchi, M., Adachi, H., Hiramoto, M., Matsukawa, N., Odagawa, A., Setsune, K. and Sakakima, H., Jpn. J. Appl. Phys. 41, 4 (2002).Google Scholar
8. Margulies, D. T., Parker, F. T., Spada, F. E., Goldman, R. S., Li, J., Sinclair, R. and Berkowitz, A. E., Physical Review B 53 (14), 9175–9187 (1996).Google Scholar
9. Margulies, D. T., Parker, F. T., Rudee, M. L., Spada, F. E., Chapman, J. N., Aitchison, P. R. and Berkowitz, A. E., Physical Review Letters 79 (25), 5162 (1997).Google Scholar
10. Soeya, S., Hayakawa, J., Takahashi, H., Ito, K., Yamamoto, C., Kida, A., Asano, H. and Matsui, M., Applied Physics Letters 80 (5), 823–825 (2002).Google Scholar
11. Arora, S. K., Wu, H.-C., Choudhary, R. J., Shvets, I. V., Mryasov, O. N., Yao, H. and Ching, W. Y., Physical Review B 77 (13), 134443 (2008).Google Scholar
12. Orna, J., Algarabel, P. A., Morellón, L., Pardo, J. A., de Teresa, J. M., López Antón, R., Bartolomé, F., García, L. M., Bartolomé, J., Cezar, J. C. and Wildes, A., Physical Review B 81 (14), 144420 (2010).Google Scholar
13. Voogt, F. C., Palstra, T. T. M., Niesen, L., Rogojanu, O. C., James, M. A. and Hibma, T., Physical Review B 57 (14), R8107 (1998).Google Scholar
14. Kale, S., Bhagat, S. M., Lofland, S. E., Scabarozi, T., Ogale, S. B., Orozco, A., Shinde, S. R., Venkatesan, T., Hannoyer, B., Mercey, B. and Prellier, W., Physical Review B 64 (20), 205413 (2001).Google Scholar
15. Eerenstein, W., Palstra, T. T. M., Saxena, S. S. and Hibma, T., Physical Review Letters 88 (24), 247204 (2002).Google Scholar
16. Shaw, K. A., Lochner, E. and Lind, D. M., Journal of Applied Physics 87 (4), 1727–1733 (2000).Google Scholar
17. Zhou, W. L., Wang, K.-Y., O’Connor, C. J. and Tang, J., Journal of Applied Physics 89 (11), 7398–7400 (2001).Google Scholar
18. Xiang, H., Shi, F., Rzchowski, M. S., Voyles, P. M. and Chang, Y. A., Applied Physics Letters 97 (9), 092508–092503 (2010).Google Scholar
19. Moodera, J. S., Nassar, J. and Mathon, G., Annual Review of Materials Science 29 (1), 381–432 (2003).Google Scholar
20. Chen, H.-Y. and Lu, F.-H., Journal of Vacuum Science & Technology A 23 (4), 1006–1009 (2005).Google Scholar
21. Xiang, H., Ji, C. X., Yang, J. and Chang, Y., Applied Physics A: Materials Science & Processing 98 (4), 707–710 (2010).Google Scholar
22. Xiang, H., Shi, F. Y., Zhang, C., Rzchowski, M. S., Voyles, P. M. and Chang, Y. A., Scripta Materialia 65 (8), 739–742 (2011).Google Scholar
23. Voyles, P. M., Grazul, J. L. and Muller, D. A., Ultramicroscopy 96 (3-4), 251–273 (2003).Google Scholar
24. Bosman, M., Watanabe, M., Alexander, D. T. L. and Keast, V. J., Ultramicroscopy 106 (11-12), 1024–1032.Google Scholar
25. Colliex, C., Manoubi, T. and Ortiz, C., Physical Review B 44 (20), 11402 (1991).Google Scholar
26. Hoefer, H. E., Brey, G. P., Schulz-Dobrick, B. and Oberhaensli, R., Eur J Mineral 6 (3), 407–418 (1994).Google Scholar
27. Brabers, V. A. M., Physica B: Condensed Matter 205 (2), 143–152 (1995).Google Scholar
28. Droubay, T. C., Pearce, C. I., Ilton, E. S., Engelhard, M. H., Jiang, W., Heald, S. M., Arenholz, E., Shutthanandan, V. and Rosso, K. M., Physical Review B 84 (12), 125443 (2011).Google Scholar
29. Sankararaman, M. and Perry, D., Journal of Materials Science 27 (10), 2731–2733 (1992).Google Scholar
30. Lawless, K. R., Reports on Progress in Physics 37 (2), 231 (1974).Google Scholar
31. Kąkol, Z., Sabol, J. and Honig, J. M., Physical Review B 43 (1), 649 (1991).Google Scholar