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Highly Chemical Reactive Ion Etching of Gallium Nitride

Published online by Cambridge University Press:  03 September 2012

F. Karouta
Affiliation:
COBRA Inter-University Research Institute on Communication Technology Eindhoven University of Technology - Department of Electrical Engineering P.O.Box 513, NL-5600 MB Eindhoven, Netherlands
B. Jacobs
Affiliation:
COBRA Inter-University Research Institute on Communication Technology Eindhoven University of Technology - Department of Electrical Engineering P.O.Box 513, NL-5600 MB Eindhoven, Netherlands
I. Moerman
Affiliation:
Department of Information Technology (INTEC), University of Ghent, Sint Pieternieuwstraat 41, 9000 Ghent, Belgium
K. Jacobs
Affiliation:
Department of Information Technology (INTEC), University of Ghent, Sint Pieternieuwstraat 41, 9000 Ghent, Belgium
J.L. Weyher
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw –, Poland
S. Porowski
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw –, Poland
R. Crane
Affiliation:
Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, Netherlands
P.R. Hageman
Affiliation:
Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, Netherlands
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Abstract

: A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

[1] Vartuli, C.B., Pearton, S.J., Lee, J.W., Hong, J., Mackenzie, J.D., Abernathy, C.R. and Shul, S.J., Appl. Phys. Lett. 69, 1426 (1996).Google Scholar
[2] Karouta, F., Jacobs, B., Vreugdewater, P., Melick, N.G.H. v., Schön, O., Protzmann, H., Heuken, M.. Electrochemical and Solid State Letters, 2, (5), 240241, (1999).Google Scholar
[3] Feng, M.S., Guo, J.D., Lu, Y.M., Chang, E.Y., Materials Chemistry and Physics, 45, 80 (1996).Google Scholar
[4] Adesida, I., Mahajan, A. and Andideh, E., Appl. Phys. Lett. 63, 2777 (1993).Google Scholar
[5] Schauler, M., Eberhard, F., Kirchner, C., Schwelger, V., Pelzmann, A., Kamp, M., Ebeling, K.J., Bertram, F., Riemann, T., Christen, J., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S., Appl. Phys. Lett., 74, (8), 11231125, (1999).Google Scholar
[6] Prystawko, P., Leszczynski, M., Beamount, B., Gibart, P., Frayssinet, E., Knap, W., Phys. Stat. Sol. B, 210, (2), 437443, (1998).Google Scholar
[7] Porowski, S., J. Crystal Growth 166, 583589, (1996).Google Scholar
[8] Weyher, J.L., Zauner, A.R.A., Brown, P.D., Karouta, F., Wysmolek, A., Hageman, P.R., Porowski, S., accepted for presentation at the 3rd International Conference on Nitride Semiconductors, July 5-9, Montpellier, France, (1999). Accepted for the proceedings in journal of Physica Status Solidi.Google Scholar
[9] Weyher, J.L, Müller, S., Grzegory, I., Porowski, S., J. Crystal Growth, 182, 1722, 1997.Google Scholar
[10] Weyher, J.L., Brown, P.D., Zauner, A.R.A., Müller, S., Boothroyd, C.B., Foord, D.T., Hageman, P.R., Humphreys, C.J., Larsen, P.K., Grzegory, I., Porowski, S., J. Crystal Growth, 204, 419428, 1999.Google Scholar