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High-Deposition-Rate a-Si:H Through VHF-CVD of Argon-Diluted Silane

Published online by Cambridge University Press:  15 February 2011

H. Meiling ,
J. Bezemer ,
R. E. I. Schropp  and
W. F. Van Der Weg
H. Meiling
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, The Netherlands
J. Bezemer
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, The Netherlands
R. E. I. Schropp
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, The Netherlands
W. F. Van Der Weg
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, The Netherlands
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Abstract

We discuss various ways to produce hydrogenated amorphous silicon, a-Si:H, at a high deposition rate. We also present results of our recent study on the structural properties of a-Si:H films deposited at high rates using argon (Ar) dilution of silane in a 50-MHz glow discharge. The results of the depositions with Ar dilution are compared to films deposited from pure silane, SiH4. The deposition rate rd is changed by varying the rf power Prf into the discharge. We focus on the Prf-dependence of the hydrogen (H) bonding configuration and total H content in the film. It is observed that rd saturates at 14 Å/s for pure SiH4, and at 22 Å/s for Ar-diluted SiH4 deposition. Upon increase of Prf the H bonding configuration changes from mostly isolated H to mostly clustered H, and back to mostly isolated H. It is argued that Ar* metastable atoms play an important role in the growth mechanism at intermediate Prf, whereas at high Prf ion bombardment through Ar+ and ions becomes crucial. Two high-rate a-Si:H films are incorporated in thin-film transistors, TFTs. We present their characteristics before and after illumination with calibrated light. It is shown that a-Si:H TFTs with a saturation mobility of 0.7 cm2/Vs can be fabricated, with the complete intrinsic layer deposited at 20 Å/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 459
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Ganguly, G. and Matsuda, A., in Technical Digest of the International PVSEC-9 (Miyazaki, Japan, 1996), p. 263.Google Scholar
[2] Shiratani, M., Matsuo, S., and Watanabe, Y., Jpn. J. Appl. Phys. 30, 1887 (1991).Google Scholar
[3] Yamada, H. and Torii, Y., Appl. Phys. Lett. 50, 386 (1987).Google Scholar
[4] Shing, Y.H., Yang, C.L., Allevato, C.E., and Pool, F.S., in Amorphous Silicon Technology – 1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., and LeComber, P.G. (Materials Research Society, Pittsburgh, 1989), Vol. 149, p. 63.Google Scholar
[5] Pool, F.S., Essick, J.M., Shing, Y.H., and Mather, R.T., in Amorphous Silicon Technology – 1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A., and Schiff, E.A. (Materials Research Society, Pittsburgh, 1992), Vol. 258, p. 173.Google Scholar
[6] Severens, R.J., Brussaard, G.J.H., Verhoeven, H.J.M., van de Sanden, M.C.M, and Schram, D.C., in Amorphous Silicon Technology – 1995, edited by Hack, M., Schiff, E.A., Madan, A., Powell, M., and Matsuda, A. (Materials Research Society, Pittsburgh, 1995), Vol. 377, p. 33.Google Scholar
[7] Takechi, K., Hayama, H., and Uchida, H., in Thin Film Transistor Technologies II, edited by Kuo, Y. (The Electrochemical Society, Inc., Pennington, 1995), Proc. Vol. 94–35, p. 160.Google Scholar
[8] Mukherjee, C., Anadan, C., Seth, T., Dixit, P.N., and Bhattacharyya, R., Appl. Phys. Lett. 68, 194 (1996),Google Scholar
Mukherjee, C., Anadan, C., Seth, T., Dixit, P.N., and Bhattacharyya, R., Appl. Phys. Lett. 68, p. 835.Google Scholar
[9] Hamasaki, T., Ueda, M., Chayahara, A., and Osaka, Y., Appl. Phys. Lett. 44, 600 (1984).Google Scholar
[10] Matsuda, A. and Tanaka, K., J. Appl. Phys. 60, 2351 (1986).Google Scholar
[11] Crandall, R.S., Manan, A.H., Nelson, B.P., Vanecek, M., and Balberg, I., AIP Conf. Proc. 268, 81 (1992).Google Scholar
[12] Nelson, B.P., Iwaniczko, E., Schropp, R.E.I., Mahan, H., Molenbroek, E.C., Salamon, S., and Crandall, R.S., in Proc. of the 12th European Photovoltaic Solar Energy Conference, 1994, eds. Hill, R., Palz, W., Helm, P., p. 679.Google Scholar
[13] Mahan, A.H., Iwaniczko, E., Nelson, B.P., Reedy, R.C. Jr, Crandall, R.S., Guha, S., and Yang, J., in Conference Record of the 25th IEEE Photovoltaic Specialists Conference (IEEE, New York, NY, U.S.A., 1996), 1065.Google Scholar
[14] Schropp, R.E.I., Feenstra, K.F., van der Werf, C.H.M., Holleman, J., and Meiling, H., in Amorphous Silicon Technology – 1996, edited by Hack, M., Schiff, E.A., Wagner, S., Schropp, R., and Matsuda, A. (Materials Research Society, Pittsburgh, 1996), Vol. 420, p. 109.Google Scholar
[15] Meiling, H. and Schropp, R.E.I., Appl. Phys. Lett. 69, 1062 (1996).Google Scholar
[16] Meiling, H. and Schropp, R.E.I., to be published in Appl. Phys. Lett. (May 1997).Google Scholar
[17] Scott, B.A., Brodsky, M.H., Green, D.C., Kirby, P.B., Plecenik, R.M., and Simonyi, E.E., Appl. Phys. Lett. 37, 725 (1980).Google Scholar
[18] Ogawa, K., Shimizu, I., and Inoue, E., Jpn. J. Appl. Phys. 20, L639 (1981).Google Scholar
[19] Sansonnens, L., Howling, A.A., Hollenstein, Ch., Dorier, J.-L., and Kroll, U., J. Phys. D 27, 1406 (1994).Google Scholar
[20] Rath, J.K., Das, U.K., and Choudhuri, P., in Proc. of the 13th European Photovoltaic Solar Energy Conference, 1995, eds. Freiesleben, W., Palz, W., Ossenbrink, H.A., Helm, P. (H.S. Stephens & Associates, Bedford, UK, 1995), p. 280.Google Scholar
[21] Das, U.K., Chaudhuri, P., and Ksirsagar, S.T., J. Appl. Phys. 80, 5389 (1996).Google Scholar
[22] Swiatkowski, C., Roca i Cabarrocas, P., and Kunst, M., in Amorphous Silicon Technology – 1993, edited by Schiff, E.A., Thompson, M.J., Madan, A., Tanaka, K., and LeComber, P.G. (Materials Research Society, Pittsburgh, 1993), Vol. 297, p. 73.Google Scholar
[23] Maruyama, E., Hishikawa, Y., Tanaka, M., Kiyama, S., and Tsuda, S., in Amorphous Silicon Technology – 1996, edited by Hack, M., Schiff, E.A., Wagner, S., Schropp, R., and Matsuda, A. (Materials Research Society, Pittsburgh, 1996), Vol. 420, p. 329.Google Scholar
[24] See, e.g., Knights, J.C., Lujan, R.A., Rosenblum, M.P., Street, R.A., Biegelsen, D.K., and Reimer, J.A., Appl. Phys. Lett. 38, 331 (1981).Google Scholar
[25] Curtins, H., Wyrsch, N., Favre, M., and Shah, A.V., Plasma Chem. Plasma Process. 7, 267 (1987).Google Scholar
[26] Oda, S., Noda, J., and Matsumura, M., in Amorphous Silicon Technology, edited by Madan, A., Thompson, M.J., Taylor, P.C., LeComber, P.G., and Hamakawa, Y. (Materials Research Society, Pittsburgh, 1988), Vol. 118, p. 117.Google Scholar
[27] Meiling, H., van Sark, W.G.J.H.M., Bezemer, J., and van der Weg, W.F., J. Appl. Phys. 80, 3546 (1996).Google Scholar
[28] Kroll, U., Finger, F., Dutta, J., Keppner, H., Shah, A., Howling, A., Dorier, J.-L., and Hollenstein, Ch., in Amorphous Silicon Technology – 7992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A., and Schiff, E.A. (Materials Research Society, Pittsburgh, 1992), Vol. 258, p. 135.Google Scholar
[29] Hautala, J.J., Saleh, Z.M., Westendorp, J.F.M., Souk, J., and Meiling, H., in Amorphous Silicon Technology – 1996, edited by Hack, M., Schiff, E.A., Wagner, S., Schropp, R., and Matsuda, A. (Materials Research Society, Pittsburgh, 1996), Vol. 420, p. 83.Google Scholar
[30] Meiling, H., van der Weg, W.F., Schropp, R.E.I., and Holleman, J., in Thin Film Transistor Technologies III, edited by Kuo, Y. (The Electrochemical Society, Inc., Pennington, 1997), Proc. Vol. 96–23, p. 146.Google Scholar
[31] Chatham, H. and Bhat, P.K., in Amorphous Silicon Technology – 1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., and LeComber, P.G. (Materials Research Society, Pittsburgh, 1989), Vol. 149, p. 447.Google Scholar
[32] Shah, A.V., Dutta, J., Wyrsch, N., Prasad, K., Curtins, H., Finger, F., Howling, A., and Hollenstein, C., in Amorphous Silicon Technology – 1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A., and Schiff, E.A. (Materials Research Society, Pittsburgh, 1992), Vol. 258, p. 15.Google Scholar
[33] van Sark, W.G.J.H.M., Bezemer, J., van der Heijden, R., and van der Weg, W.F., in Amorphous Silicon Technology – 1996, edited by Hack, M., Schiff, E.A., Wagner, S., Schropp, R., and Matsuda, A. (Materials Research Society, Pittsburgh, 1996), Vol. 420, p. 21.Google Scholar
[34] Meiling, H., Westendorp, J.F.M., Hautala, J.J., Saleh, Z.M., and Malone, C.T., in Flat Panel Display Materials, edited by Batey, J., Chiang, A., and Holloway, P.H. (Materials Research Society, Pittsburgh, 1994), Vol. 345, p. 65.Google Scholar
[35] Ganguly, G. and Matsuda, A., in Amorphous Silicon Technology – 1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A., and Schiff, E.A. (Materials Research Society, Pittsburgh, 1992), Vol. 258, p. 39.Google Scholar
[36] Andújar, J.L., Bertran, E., Canillas, A., Roch, C., and Morenza, J.L., J. Vac. Sci. Technol. A 9, 2216 (1991).Google Scholar
[37] Kuo, Y., in Thin Film Transistor Technologies, edited by Kuo, Y. (The Electrochemical Society, Inc., Pennington, 1992), Proc. Vol. 92–24, p. 59.Google Scholar
[38] Hack, M., in Thin Film Transistor Technologies, edited by Kuo, Y. (The Electrochemical Society, Inc., Pennington, 1992), Proc. Vol. 92–24, p. 44.Google Scholar