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High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering

Published online by Cambridge University Press:  01 January 1993

Y. H. Liang ,
N. Maley  and
J. R. Abelson
Y. H. Liang
Affiliation:
Coordinated Science Laboratory and the Materials Science and Engineering Department, University of Illinois, Urbana, IL 61801
N. Maley
Affiliation:
Coordinated Science Laboratory and the Materials Science and Engineering Department, University of Illinois, Urbana, IL 61801
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Materials Science and Engineering Department, University of Illinois, Urbana, IL 61801
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Abstract

We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320∼425°C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2∼5×l015 cm−3with H content changing from 15–10 at.% as Ts increases from 320–375°C. For 100 hrs white light exposure at lW/cm2, a heavily degraded state was obtained with mid–gap state density in the range 2-3×l016cm−3 over this Ts range. These are among the lowest values reported for intrinsic a–Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 145
Copyright
Copyright © Materials Research Society 1993

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References

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