Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:44:04.656Z Has data issue: false hasContentIssue false
  • English
  • Français

High Deposition Rate Amorphous Silicon Solar Cells and Thin Film Transistors Using the Pulsed Plasma Pecvd Technique

Published online by Cambridge University Press:  10 February 2011

Scott Morrison ,
Jianping Xi  and
Arun Madan
Scott Morrison
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Jianping Xi
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Arun Madan
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Get access

Abstract

The pulsed plasma technique has been shown to increase the deposition rate without an increase in the particulate count in the plasma which is an important factor determining the yield of commercial products such as active matrix displays. In this paper, we report the deposition of amorphous silicon at deposition rates of up to 15 Å/sec, using a modulation frequency in the range of 1-100kHz. These materials have been incorporated into a simple p/i/n solar cell and thin film transistor (TFT) configurations. We report on the effect of the conversion efficiency as a function of the modulation frequency, which in turn is related to the deposition rate. We also report on the TFT performance with modulation frequency and compare the results with devices made under the conventional continuous wave PECVD plasma at 13.56MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 559
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Curtins, H., Wyrsch, N., and Shah, A. V., Electronic Letters 23, 228 (1987)Google Scholar
2 Kimura, H., Maeda, H., Murakami, H., Nakahigashi, T., Ohtani, S., Tabata, T., Hayashi, T., Kobayashi, M., Mitsuda, Y., Nakamura, N., Kuwahara, H., and Doi, A., Jpn. J. Appl. Phys. 33, 4389(1994).Google Scholar
3 McMahon, T. J. and Madan, A., Appl. Phys. Lett. 57, 5302, (1985)Google Scholar
4 Kagawa, T., Matsumoto, N., and Kumabe, K., Phys. Rev., B 28, 4570 (1983)Google Scholar
5 Anderson, D. A. and Spear, W. E., Phil. Mag. 36, 695 (1977)Google Scholar
6 Madan, A. and Shaw, M., The Physics and Applications of Amorphous Semiconductors, Academic Press, 1988, p 287.Google Scholar
7 Thompson, M. J., J. Vac. Sci. and Technol., 2, 287 (1984)Google Scholar
8 Overset, L. J. and Verdyen, J. T., Appl. Phys. Lett. 59, 2091 (1991)Google Scholar
9 Nakahigashi, T., Hayashi, T., Izumi, Y., Kobayashi, M., Kuwahara, H. and Nakabayashi, M., Jpn. J. Appl. Phys. Vol. 36, pp. 328–332 (1997)Google Scholar