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High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

Published online by Cambridge University Press:  01 February 2011

Kris A. Bertness ,
J. B. Schlager ,
N. A. Sanford ,
A. Roshko ,
T. E. Harvey ,
A. V. Davydov ,
I. Levin ,
M. D. Vaudin ,
J. M. Barker  and
P. T. Blanchard
...Show all authors
Kris A. Bertness
Affiliation:
[email protected], NIST, Optoelectronics Division, Mail Stop 815.04, 325 Broadway, Boulder, CO, 80305, United States, 303-497-5069, 303-497-3387
J. B. Schlager
Affiliation:
[email protected], NIST, United States
N. A. Sanford
Affiliation:
[email protected], NIST, United States
A. Roshko
Affiliation:
[email protected], NIST, United States
T. E. Harvey
Affiliation:
[email protected], NIST, United States
A. V. Davydov
Affiliation:
[email protected], NIST, United States
I. Levin
Affiliation:
[email protected], NIST, United States
M. D. Vaudin
Affiliation:
[email protected], NIST, United States
J. M. Barker
Affiliation:
[email protected], NIST, United States
P. T. Blanchard
Affiliation:
[email protected], NIST, United States
L. H. Robins
Affiliation:
[email protected], NIST, United States
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Abstract

We have grown a variety of isolated GaN nanowires using gas-source molecular beam epitaxy (MBE) and characterized their structural and optical properties. The nanowires have demonstrated a number of promising materials characteristics, including low defect density and high luminescent intensity. Well-separated nanowires formed spontaneously on Si(111) substrates after deposition of a thin AlN buffer layer. Metal catalysts were not used. X-ray diffraction indicates that the c and a lattice parameters are within 0.01 % of the lattice parameters of bulk GaN. Transmission electron microscopy (TEM) revealed the nanowires to be free of dislocations and stacking faults, although a GaN matrix layer growing at the base of the wires was found to have a high density of basal plane stacking faults. The room temperature photoluminescence (PL) intensity compared favorably with a free-standing, thick film of high quality GaN. Several features of the low temperature PL spectra also indicated that the nanowires had few structural defects or chemical impurities. Finally, electrical characterization of dispersed nanowires demonstrated that efficient electrical contacts could be made and that the resistivity of the nanowires was comparable to that of bulk material.

Keywords

nanostructurenitridemolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF31-03
Copyright
Copyright © Materials Research Society 2006

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References

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