Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-17T16:52:48.000Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD

Published online by Cambridge University Press:  28 February 2011

Sung Chul Kim ,
Kyu Chang Park ,
Sung Ki Kim ,
Jung Mok Jun  and
Jin Jang
Sung Chul Kim
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Kyu Chang Park
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sung Ki Kim
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jung Mok Jun
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Get access

Abstract

We studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 635
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mori, M., Kakinura, H., Sakamoto, M. and Sawai, H., Jpn. J. Appl. Phys. 30, L779(1991).Google Scholar
2. Kakinuma, H., Mobri, M. and Tsuruoka, T., Jpn. J. Appl. Phys. 70, 7374(1991).Google Scholar
3. Kakinuma, H., Mobri, M. and Tsuruoka, T., Jpn. J. Appl. Phys. 31, L1392(1992).Google Scholar
4. Jang, J., Kim, T.G., Kim, S.C., Jun, J.M. and Park, K.C., Appl. Phys. Lett. 60, 2880(1992).Google Scholar
5. Jang, J., Koh, S.O., Kim, T.G. and Kim, S.C., Appl. Phys. Lett. 60, 2874(1992).Google Scholar
6. Fritzsche, H., Solar Energy Mater. 3, 447(1980).Google Scholar
7. Matsuda, A. and Goto, T., Mat. Res. Soc. Symp. 164, 3(1989).Google Scholar
8. Yamada, A., Jia, Y., Konagai, M. and Takahashi, K., Jpn. J. Appl. Phys. 28, L2284(1989).Google Scholar
9. Tsai, C.C., Anderson, G.B., Wacker, B., Thompson, R. and Donald, C., Mat. Res. Soc. Symp. Proc. 149, 297(1989).Google Scholar