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Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs (001) by Vls Mechanism in MBE
Published online by Cambridge University Press: 28 February 2011
Abstract
Numerous GaAs epitaxial microcrystals having nearly equal size were fabricated on a S-terminated GaAs(001) surface by a sequential supply of Ga and As molecular beams. The GaAs(001) surface was terminated by sulfur atom in the MBE chamber. The growth of GaAs epitaxial microcrystals is caused by a Vapour-Liquid-Solid(VLS) mechanism. GaAs epitaxial microcrystals were also fabricated on a S-terminated GaAlAs(001) surface by the same procedure.
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- Copyright © Materials Research Society 1993
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