Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-09T05:41:03.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Pbse and Pbl-Sn1 Se Layers on Si (100)

Published online by Cambridge University Press:  10 February 2011

H. K. Sachar ,
I. Chao ,
X. M. Fang  and
P. J. McCann
H. K. Sachar
Affiliation:
[email protected]
I. Chao
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019.
X. M. Fang
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019.
P. J. McCann
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019.
Get access

Abstract

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si (100) using a MBE-grown PbSe/BaF2/CaF2 buffer layer structure. Pb1−xSnxSe layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si (100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb1−xSnxSe layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb1−xSnxSe layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF2 buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 651
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Harman, T. C., Calawa, A. R., Melngailis, I. and Dimnmock, J. O., Appl. Phys. Lett. 14, 333 (1969).Google Scholar
2. Zogg, H. and Huppi, M., Appl. Phys. Lett. 47, 133 (1985).Google Scholar
3. Maissen, C., Masek, J., Zogg, H. and Blunier, S., Appl. Phys. Lett. 53, 1608 (1988).Google Scholar
4. Zogg, H., Maissen, C., Masek, J., Blunier, S., Lambrecht, A. and Tacke, M., Appl. Phys. Lett. 55,969 (1989).Google Scholar
5. Lewelling, K. R. and McCann, P. J., IEEE Photon. Technol. Lett. 9, 297 (1997).Google Scholar
6. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc.: Electrochem. Sci. and Technol. 133, 666 (1986).Google Scholar
7. McCann, P. J., Fuchs, J., Feit, Z. and Fonstad, C. G., J. Appl. Phys. 62, 2994 (1987).Google Scholar
8. McCann, P. J. and Fonstad, C. G., J. Cryst. Growth 114, 687 (1991).Google Scholar
9. Strecker, B. S., McCann, P. J., Fang, X. M., Hauenstein, R. J., O'Steen, M., Johnson, M. B., J. Electron. Mater. 26, 444 (1997).Google Scholar