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Grain Boundary Passivation in Polycrystalline Silicon : A D.L.T.S. Study

Published online by Cambridge University Press:  15 February 2011

Prakash C. Srivastava  and
Jacques C. Bourgoin
Prakash C. Srivastava
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supèrieure, Universitè Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France.
Jacques C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supèrieure, Universitè Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France.
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Abstract

After treatment in a deuterium plasma, the D.L.T.S. spectrum associated with grain boundaries in p–type Si is found to reduce to a narrow band centered at 0.32 ± 0.02 eV with a total density of 5 ⨉ 1015 cm−2 . However, the capture cross-section, measured to be ∼ 2 × 10−20 cm2 , is 10 times larger than the apparent cross-section associated with the states present in unpassivated material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 137
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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