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Geometric and Electronic Structure of Fullerene Film Growth as a Function of Coverage

Published online by Cambridge University Press:  15 February 2011

B. Reihl
B. Reihl*
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
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Abstract

We have employed scanning tunneling microscopy at room and low temperature, i.e. 300, 50, and 5 K, to study the epitaxy and growth of fullerene films on the noble-metal surfaces Ag(110) and Au(110). Initial island growth occurs on terrace sites away from substrate step edges. Particularly at low temperatures where the rotational and vibrational movements of the fullerene molecules are frozen in, different intra-molecular topographic patterns become visible in ordered films, which are characteristic of particular adsorption sites. Complementary tunneling spectroscopy and direct and inverse photoemission measurements reveal distinct differences between the first adsorbed monolayer and additional fullerene layers indicating differences in bonding and charge transfer. Our results are compared to theoretical calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 359: Symposium G – Science and Technology of Fullerene Materials , 1994 , 377
Copyright
Copyright © Materials Research Society 1995

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