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Gas Phase Decomposition of an Organometallic Chemical Vapor Deposition Precursor to AIN:[AI(CH3)2NH2]3

Published online by Cambridge University Press:  21 February 2011

Carmela C. Amato ,
John B. Hudson  and
Leonard V. Interrante
Carmela C. Amato
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Chemistry, Troy, NY 12180
John B. Hudson
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
Leonard V. Interrante
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Chemistry, Troy, NY 12180
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Abstract

A novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organometallic precursor to AIN, [AI(CH3)2NH2]3, indicate a decomposition temperature between 200 and 270°C. The mass spectrum of the precursor at 100°C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 119
Copyright
Copyright © Materials Research Society 1990

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References

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