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Gas Phase and Surface Kinetic Processes in Hot-Wire Chemical Vapor Deposition
Published online by Cambridge University Press: 17 March 2011
Abstract
One- and two-dimensional numerical simulations have been used to determine the parameters critical to high rate growth of high quality polycrystalline silicon via hot-wire chemical vapor deposition at silane partial pressures of 1-70 mTorr and a wire temperature of 2000°C. The Direct Simulation Monte Carlo method [1] was used, including gas-phase chemistry relevant for growth. Model predictions agree both qualitatively and quantitatively with experimental measurements.
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- Copyright © Materials Research Society 2000
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