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Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates
Published online by Cambridge University Press: 15 February 2011
Abstract
The redistribution of titanium during the growth of epitaxial CoSi2 from the reaction of Co(20nm)/Ti(lOnm)/Si<100> structures has been investigated. The concentration of Ti in the CoSi2 layers versus annealing temperature has been determined. Emphasis is placed on the formation of inhomogeneities in the epitaxial CoSi2 layers, and the role of Ti with respect to the thermal stability of the layers. The fundamental mechanism for the development of inhomogeneities in the epitaxial CoSi2 layers will be discussed.
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- Copyright © Materials Research Society 1996
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