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Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

Published online by Cambridge University Press:  03 September 2012

S. P. Wong ,
Qicai Peng ,
W. Y. Cheung ,
W. S. Guo ,
J. B. Xu ,
I. H. Wilson ,
S. K. Hark ,
R. Morton  and
S. S. Lau
S. P. Wong
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
Qicai Peng
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
W. Y. Cheung
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
W. S. Guo
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
J. B. Xu
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
I. H. Wilson
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
S. K. Hark
Affiliation:
Department of Physics & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
R. Morton
Affiliation:
University of California, San Diego, Department of Electrical and Computer Engineering, La Jolla, CA 92093–0407, U.S.A.
S. S. Lau
Affiliation:
University of California, San Diego, Department of Electrical and Computer Engineering, La Jolla, CA 92093–0407, U.S.A.
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Abstract

Ion beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 307
Copyright
Copyright © Materials Research Society 1997

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References

1. Murarka, S.P., Silicides for VLSI Applications, Academic Press, New York, 1983.Google Scholar
2. Nicolet, M.-A., Lau, S.S., in VLSI Electronics Microstructures Science, Vol.6, eds. Einspruch, N.G. and Larrabee, G.B., Academic Press, New York, 1983.Google Scholar
3. White, A.E., Short, K.T., Dynes, R.C., Barno, J.P., Gibson, J.M., Appl. Phys. Lett. 50, 95 (1987).Google Scholar
4. Vantomme, A., Wu, M.F., Dezsi, I., Laugouche, G., Maex, K. and Vanhellemont, J., Mater. Sci. Eng. B 4, 157 (1989).Google Scholar
5. Van Ommen, A.H., Bulle-Lieuwma, C.W.T., Ottenheim, J.J.M., Theunissen, A.M.L., J. Appl. Phys. 67, 1767 (1990).Google Scholar
6. Radermacher, K., Mantl, S., Kohlhof, K. and Jager, W., J. Appl. Phys. 68, 3001 (1990).Google Scholar
7. De Veirman, A., Van Landuyt, J., Reeson, K.J., Gwilliam, R., Jeynes, C., Sealy, B.J., J. Appl. Phys. 68, 3792 (1990).Google Scholar
8. Bulle-Lieuwma, C.W.T., Van Ommen, A.H., Vandenhoudt, D.E.W., Ottenheim, J.J.M., A.F. de Jong, J. Appl. Phys. 70, 3093 (1991).Google Scholar
9. Witzmann, A., Schippel, S., Zentgraf, A., Gajduk, P.I., J. Appl. Phys. 73, 7250 (1993).Google Scholar
10. Meekison, C.D., Booker, G.R., Reeson, K.J., Spraggs, R.S., Gwilliam, R. M, Sealy, B.J., J. Appl. Phys. 74, 7129 (1993).Google Scholar
11. Radermacher, K., Monroe, D., White, A.E., Short, K.T., Jebasinski, R., Phys. Rev. B48, 8002 (1993).Google Scholar
12. Mantl, S., Nucl. Instr. and Meth. B84, 127 (1994).Google Scholar
13. Zhu, D.H., Chen, Y.G., Liu, B.X., Nuci. Instr. and Meth. B 101, 394 (1995).Google Scholar
14. Peng, Q., Wong, S.P., Wilson, I.H., Wang, N., Fung, K.K., Thin Solid Films 270, 573 (1995).Google Scholar
15. Peng, Q., Wong, S.P., Xu, J.B., Wilson, I.H., Mat. Res. Soc. Symp. Proc. Vol.396, 763 (1996).Google Scholar
16. Peng, Q. and Wong, S.P., Mat. Res. Soc. Symp. Proc. Vol.402, 487 (1996).Google Scholar
17. Brice, D K. and Barbour, J.C., Nucl. Instr. and Meth. B36, 431 (1989).Google Scholar
18. Wong, S.P., Peng, Q., Cheung, W.Y., Morton, R., Lau, S.S., to be published.Google Scholar
19. Bai, G., Nicolet, M-A., and Vreeland, T. Jr., J. Appl. Phys. 69, 6451(1991)Google Scholar
20. Viguier, C., Cros, A., Humbert, A., Ferrieu, C., Thomas, O., Madar, R. and Senateur, J.P., Solid State Commun., 60, 923(1986)Google Scholar