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Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

Published online by Cambridge University Press:  22 February 2011

V.A. Gorbyley ,
A.A. Chelniy ,
A.A. Chekalin ,
A.Y. Polyakov ,
S.J. Pearon ,
N.B. Smirnov ,
A.V. Gnorkov ,
B.M. Leiferov ,
E.V. Popova  and
V.A. Kusikov
...Show all authors
V.A. Gorbyley
Affiliation:
Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia
A.A. Chelniy
Affiliation:
Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia
A.A. Chekalin
Affiliation:
Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia
A.Y. Polyakov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
S.J. Pearon
Affiliation:
Materials Science Department, University of Florida, Heinz Hall, Gainsville, Florida, FL 32111, USA
N.B. Smirnov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
A.V. Gnorkov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
B.M. Leiferov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
E.V. Popova
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
V.A. Kusikov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
A.A. Balmashnov
Affiliation:
Russian Friendship University, Miklukho-Maklay str., 6, Moscow, 117198, Russia
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Abstract

It is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 265
Copyright
Copyright © Materials Research Society 1994

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References

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