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Fabrication of Nitrided Mask on GaAs surface and Its Machinability for STM lithography

Published online by Cambridge University Press:  01 February 2011

Yo Yamamoto ,
Sota MATSUOKA ,
Toshiyuki Kondo ,
Takahiro Maruyama  and
Shigeya Naritsuka
Yo Yamamoto
Affiliation:
[email protected], Meijo Univ., 21stCentury COE Program, 1-501Shiogamagudhi,Tempakuku, NAGOYA, N/A, N/A, Japan
Sota MATSUOKA
Affiliation:
[email protected], Meijo Univ., Dept. of Matterrials Science and Engineering, Japan
Toshiyuki Kondo
Affiliation:
[email protected], Meijo Univ., Dept. of Matterrials Science and Engineering, Japan
Takahiro Maruyama
Affiliation:
[email protected]
Shigeya Naritsuka
Affiliation:
[email protected], Japan
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Abstract

A nitridation mask on a GaAs surface was prepared using RF-MBE and its machinability by STM lithography was studied. A 5.2 nm thick crystal-like layer was formed at 350°C, and was modified by STM at a sample bias of ±80V with good size reliability, which was sufficiently fine for realizing dislocation-free heteroepitaxial growth of GaAs / Si. The mask was maintained up to 620°C under As flux exposure at 1.5 × 10−4 Pa.

Keywords

epitaxyscanning probe microscopy (SPM)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-23
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Nishinaga, T., Nakano, T. and Zhang, S., Jpn. J. Appl. Phys. 27 (1988) L694.Google Scholar
[2] Zhang, S. and Nishinaga, T., J. Cryst. Growth. 99 (1990) 292.10.1016/0022-0248(90)90530-XGoogle Scholar
[3] Suzuki, Y. and Nishinaga, T., Jpn. J. Appl. Phys. 28 (1989) 440.10.1143/JJAP.28.440Google Scholar
[4] Bargman, R., Bauser, E. and Werner, J. H., Appl. Phys. Lett. 57 (1990) 351.Google Scholar
[5] Bargman, R., J. Cryst. Growth 110 (1991) 823.10.1016/0022-0248(91)90640-QGoogle Scholar
[6] Zhang, S. and Nishinaga, T., Jpn. J. Appl. Phys. 29 (1990) 545.Google Scholar
[7] Yamamoto, Y., Kondo, T., Matsuoka, S., Maruyama, T. and Naritsuka, S., Proc. of 24th Electronic Materials Symposium, (2005) K13.Google Scholar
[8] Naritsuka, S. ‘Studies of High Quality InP Layers Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth’, Doctoral thesis, University of Tokyo, (1995).Google Scholar