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Excimer Laser Assisted Deposition of GaAs, AlAs, and [Al.Ga]as from Lewis Acid-Base Adducts

Published online by Cambridge University Press:  28 February 2011

J. J. Zinck ,
P. D. Brewer ,
J. E. Jensen ,
G. L. Olson  and
L. W. Tutt
J. J. Zinck
Affiliation:
Hughes Research Laboratories, Malibu. CA 90265
P. D. Brewer
Affiliation:
Hughes Research Laboratories, Malibu. CA 90265
J. E. Jensen
Affiliation:
Hughes Research Laboratories, Malibu. CA 90265
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu. CA 90265
L. W. Tutt
Affiliation:
Hughes Research Laboratories, Malibu. CA 90265
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Abstract

Laser-assisted deposition of GaAs, AlAs and [AIGa]As thin films on Ge(100) substrates from trimethylgallium-trimethylarsenic and trimethylaluminumtrimethylarsenic Lewis acid-base adduct source materials is reported. A parametric study has been performed in which reactive gas pressure, substrate temperature, laser fluence, laser wavelength (248 nm or 193 nm). and orientation of the laser beam with respect to the substrate have been varied. In the case of irradiation parallel to the substrate, stoichiometric films of GaAs and [AIGa]As have been obtained. The data suggest that for irradiation perpendicular to the substrate a competition exists between desorption and photodeposition, which adversely affects film stoichiometry under the conditions studied.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 233
Copyright
Copyright © Materials Research Society 1987

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