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Evolution of Crystallinity in Mixed-Phase (a+μc)-Si:H as Determined by Real Time Spectroscopic Ellipsometry

Published online by Cambridge University Press:  01 February 2011

A. S. Ferlauto
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
G. M. Ferreira
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
R.J. Koval
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
J.M. Pearce
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
C.R. Wronski
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
R.W. Collins
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
M. M. Al-Jassim
Affiliation:
Department of Physics, Materials Research Institute, and Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
K. M. Jones
Affiliation:
Department of Physics, Materials Research Institute, and Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
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Abstract

The ability to characterize the phase of the intrinsic (i) layers incorporated into amorphous silicon [a-Si:H] and microcrystalline silicon [μc-Si:H] thin film solar cells is critically important for cell optimization. In our research, a new method has been developed to extract the thickness evolution of the μc-Si:H volume fraction in mixed phase amorphous + microcrystalline silicon [(a+μc)-Si:H] i-layers. This method is based on real time spectroscopic ellipsometry measurements performed during plasma-enhanced chemical vapor deposition of the films. In the analysis, the thickness at which crystallites first nucleate from the a-Si:H phase can be estimated, as well as the nucleation density and microcrystallite cone angle. The results correlate well with structural and solar cell measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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