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Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

Published online by Cambridge University Press:  25 February 2011

I. Golecki ,
F. Reidinger  and
J. Marti
I. Golecki
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
F. Reidinger
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
J. Marti
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
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Abstract

Monocrystalline, epitaxial cubic (100) SiC films have been grown on monocrystalline (100) Si substrates at 750°C, the lowest epitaxial growth temperature reported to date. The films were grown by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus used in this study and the properties of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 519
Copyright
Copyright © Materials Research Society 1992

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References

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