Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-06T12:06:22.983Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs

Published online by Cambridge University Press:  15 February 2011

M. Lisker ,
A. Krtschil ,
H. Witte ,
J. Christen ,
D.J. As ,
B. Schöttker  and
K. Lischka
M. Lisker
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, D-39016 Magdeburg, Germany
A. Krtschil
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, D-39016 Magdeburg, Germany
H. Witte
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, D-39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, D-39016 Magdeburg, Germany
D.J. As
Affiliation:
FB 6- Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn, Germany
B. Schöttker
Affiliation:
FB 6- Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn, Germany
K. Lischka
Affiliation:
FB 6- Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn, Germany
Get access

Abstract

Nominally undoped cubic GaN epilayers deposited by rf-plasma assisted molecular beam epitaxy on semi-insulating GaAs substrates were investigated by electric and photoelectric spectroscopical methods. As a consequence of the existence of deep levels in the GaAs-substrate itself, special care has to be taken to separate the contributions of the substrate from that of the cubic GaN epilayer in the various spectra. Two different contact configurations (coplanar and sandwich structures) were successfully used to perform this separation. In the cubic GaN epilayer a trap with a thermal activation energy of (85±20)meV was found by thermal admittance spectroscopy and thermal stimulated currents. Optical admittance spectroscopy and photocurrent measurements furthermore revealed defects at EG -(0.04-0.13) eV, EG-(0.21-0.82) eV and two additional deeper defects at 1.91 Ev and 2.1 eV, respectively. These defect related transitions are very similar to those observed in hexagonal GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.14
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

/1/ As, D.J., Wang, C., Schöttker, B., Schikora, D., Lischka, K.: Mater. Res. Soc. Symp. Proc. 482, 661 (1997)Google Scholar
/2/ Brandt, O., Yang, H., Kostial, H., Ploog, K.L.: Appl. Phys. Lett. 69, 2707 (1996)Google Scholar
/3/ As, D.J., Schmilgus, F., Wang, C., Schöttker, B., Schikora, D., Lischka, K.: Appl. Phys. Lett. 70, 1311 (1997)Google Scholar
/4/ Wu, J., Yaguchi, H., Onabe, K., Ito, R., Shiraki, Y.: Appl. Phys. Lett. 71, 2067 (1997)Google Scholar
/5/ As, D.J., Schikora, D., Greiner, A., Lübbers, M., Mimkes, J., Lischka, K.: Phys. Rev. B. 54, R8381 (1996)Google Scholar
/6/ Schikora, D., Hankeln, M., As, D.J., Lischka, K., Litz, T., Waag, A., Buhrow, T., Henneberger, F.: Phys. Rev. B 54, R11118 (1996)Google Scholar
/7/ Lisker, M., Krtschil, A., Witte, H., Großer, O., Christen, J., Jurisch, M., Kretzer, U.: Inst. Phys. Conf. Ser. 160, 413 (1997)Google Scholar
/8/ Barbolla, J., Duenas, S., Bailon, L.: Sol. State Electron. 35, 285 (1992)Google Scholar
/9/ Krtschil, A., Lisker, M., Witte, H., Christen, J., Birkle, U., Einfeldt, S., Hommel, D.: in print Mater. Science and Engineering B (1998)Google Scholar
/10/ Krtschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., HommeL, D.: J. Appl. Phys. 84, 2040 (1998)Google Scholar
/11/ Ramirez-Flores, G., Navarro-Contreras, H., Lastras-Martinez, A., Powell, R.C., Greene, J.E.: Phys. Rev. B 50, 8433 (1994)Google Scholar
/12/ Wang, C., As, D. J., Schöttker, B., Schikora, D., and Lischka, K.: to be published in Semiconductors Science and Technology (February 1999)Google Scholar
/13/ Fang, Z.-Q., Look, D.C., Kim, W., Fan, Z., Botchkarev, A., Morkoc, H.: Appl. Phys. Lett. 72, 2277 (1998)Google Scholar