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Electrical and Microstructural Properties of Lead Titanate Thin Films Deposited by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

M. Vellaikal  and
A. Kingon
M. Vellaikal
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C 27695–7907.
A. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C 27695–7907.
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Abstract

Lead titanate thin films were deposited on Pt(111)/Ti/SiO2/Si(100) and RuO2/SiO2/Si(100) substrates using metalorganic chemical vapor deposition (MOCVD). Atomic force microscopy revealed that films on ruthenium oxide were rougher than films on platinum. Also the grain size of the film on ruthenium oxide was larger than that on platinum. X-ray analysis revealed that the preferred orientations for films on platinum and ruthenium oxide were different. Hysteresis and fatigue tests were performed to evaluate capacitor structures on these substrates. Films on RuO2 had lower coercive fields than films on platinum. Comparison of polycrystalline and oriented films on platinum indicated that the oriented films were easier to switch and fatigued at a slower rate than the polycrystalline films. But long term property (fatigue, imprint) testing on lead titanate resulted in resistance degradation of these contacts, unlike PZT films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 343
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Sheppard, L.M., Ceram. Bull. 71, 85 (1992).Google Scholar
2. Gavrilyachenko, V.G., Spinko, R.I., Martynenko, M.A. and Fesenko, E.G., Sov. Phys. Solid State 12, 1203 (1970).Google Scholar
3. Ghonge, S.G., Goo, E. and Ramesh, R., Appl. Phys. Lett, 62(15), 1742 (1993).Google Scholar
4. Ogawa, T., Senda, A. and Kasanami, T., Japanese Journal of Applied Physics, 28, Supplement 28–2, 11 (1989).Google Scholar
5. Wang, Y., Zhang, P., Qu, B. and Zhong, W., Journal of Applied Physics 71(12), 6121 (1992).Google Scholar
6. Arizumi, A., Kawamura, K., Kikuchi, I. and Kato, I., Japanese Journal of Applied Physics, 24, Supplement 24–3, 7 (1985).Google Scholar
7. Kingon, A.I., Hsieh, K.Y., King, L.L.H., Rou, S.H., Bachmann, K.J. and Davis, R.F., Mat. Res. Soc. Proc. Vol. 200, 49 (1990).Google Scholar
8. Kwak, B.S., Boyd, E.P. and Erbil, A., Appl. Phys. Lett 58(23), 1702 (1988).Google Scholar
9. Holstein, William L., Prog. Crystal Growth and Charact., 24, 111 (1992).Google Scholar
10. Kim, Yong Bum, Yoon, Son - Gi and Kim, Ho - Gi, J. Electrochem. Soc, 139, (9), 2559 (1992).Google Scholar
11. Greenwald, Anton C., Daly, James T. and Kalkhoran, Nader M., Mat. Res. Soc. Symp. Proc, Vol. 243, 229 (1992).Google Scholar
12. Dormans, G.J.M., De Keijser, M. and Larsen, P.K., International Symposium on Integrated Ferroelectrics, 598, (1991).Google Scholar
13. Al-Shareef, H.N., Bellur, K.R., Auciello, O. and Kingon, A.I., accepted for publication in Integrated Ferroelectrics, (in press) (1994)Google Scholar