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Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

Published online by Cambridge University Press:  21 April 2011

Nikolas Zographos ,
Christoph Zechner  and
Ibrahim Avci
Nikolas Zographos
Affiliation:
Synopsys Switzerland LLC, Zurich, CH-8050, Switzerland
Christoph Zechner
Affiliation:
Synopsys Switzerland LLC, Zurich, CH-8050, Switzerland
Ibrahim Avci
Affiliation:
Synopsys, Inc., Mountain View, CA, 94043
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Abstract

The simulation of deep-submicron silicon-device manufacturing processes relies on predictive models for extended defect clusters. For submicroscopic interstitial clusters and {311} defects, an efficient and highly accurate model for process simulation has been developed and calibrated recently [1]. This model combines equations for three small interstitial clusters and two moments for {311} defects. In this work, we extend this model to include dislocation loops and to reproduce a greatly increased range of experimental data, including thermal annealing of end-of-range defects after amorphizing implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F10-01
Copyright
Copyright © Materials Research Society 2007

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