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Effects of Surface Treatments on Optical Properties of GaN

Published online by Cambridge University Press:  01 February 2011

Gakuyo Fujimoto ,
Katsushi Fujii ,
Tsutomu Minegishi ,
Hiroki Goto ,
Takenari Goto  and
Takafumi Yao
Gakuyo Fujimoto
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki aza Aoba 6-3. Aoba-ku, Sendai, Miyagi, 980-8578, Japan, +81-22-795-4404, +81-22-795-7810
Katsushi Fujii
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki aza Aoba 6-3. Aoba-ku, Sendai, Miyagi, 980-8578, Japan
Tsutomu Minegishi
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki aza Aoba 6-3. Aoba-ku, Sendai, Miyagi, 980-8578, Japan
Hiroki Goto
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki aza Aoba 6-3. Aoba-ku, Sendai, Miyagi, 980-8578, Japan
Takenari Goto
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki aza Aoba 6-3. Aoba-ku, Sendai, Miyagi, 980-8578, Japan
Takafumi Yao
Affiliation:
[email protected], Tohoku University, Center for Interdisciplinary Research, Aramaki aza Aoba 6-3. Aoba-ku, Sendai, Miyagi, 980-8578, Japan
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Abstract

Removing artificial oxide layer is important for fabrication process of semiconductor devices. We employed photoluminescence for optical, reflection high energy electron diffraction, atomic force microscope, and Nomarski microscope for surface analysis. We found that it is more difficult to remove the oxide layer made by O-plasma such as in O-plasma asher than that of native one. Our result reached that HF etching is effective for removal of the artificial oxide layer without changing surface morphology. In addition, (NH4)2Sx treatment after HF etching reduces donor bound exciton drastically which is dominant luminescence near the band edge at low temperature.

Keywords

nitridepassivationoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-08
Copyright
Copyright © Materials Research Society 2007

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References

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