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Effects of Implantation Temperature on the Structure, Composition and Oxidation Resistance of Sic

Published online by Cambridge University Press:  21 February 2011

Zunde Yang
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
Honghua Du
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
Matthew Libera
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
Irwin L. Singer
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, D.C. 20375
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Abstract

ɑ-SiC crystals were implanted with aluminum to a high dose at room temperature or 800°C. Studies by transmission electron microscopy showed that SiC was amorphized by room temperature implantation but remained crystalline at 800°C. Crystalline aluminum carbide was formed and aluminum redistribution took place in SiC implanted at 800°C. Implanted and unimplanted crystals were oxidized in 1 atm flowing oxygen at 1300°C. Amorphization led to accelerated oxidation of SiC. The oxidation resistance of SiC implanted at 800°C was comparable to that of pure SiC. The oxidation layers formed on SiC implanted at both temperatures consisted of silica embedded with mullite precipitates. The phase formation during implantation and oxidation is consistent with thermodynamic predictions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1 Yang, Z., Du, H., Libera, M., Withrow, S.P., Casas, L.M., and Lareau, R.T., Covalent Ceramics II: NonOxides, edited by Barron, A.R., Fischman, G.S., Fury, M.A., and Hepp, A.F. (MRS Symp. Proa, Boston, MA, November, 1993, Materials Research Society, Pittsburgh, PA, 1994), p. 281.Google Scholar
2 Yust, C.S. and McHargue, C.J., J. Am. Ceram. Soc. 67,117 (1984).Google Scholar
3 Burnett, P.J. and Page, T.F., J. Mater. Sei. 19,3524 (1984).Google Scholar
4 Hioki, T., Itoh, A., Ohkubo, M., Noda, S., Doi, H., Kawamoto, J. and Kamigaito, O., J. Mater. Sei., 21, 1328 (1986).Google Scholar
5 Burnett, P.J. and Page, T.F., in Science of Hard Materials, edited by Almond, E.A. (Adam Hilger, London, 1986) p. 789.Google Scholar
6 Burnett, P.J. and Page, T.F., Radiat. Effects, 97,283 (1986).Google Scholar
7 McHargue, C.J., Farlow, G.C., White, C.W., Williams, J.M., Appleton, B.R. and Naramoto, H., Mater. Sei. Eng., 69, 123 (1986).Google Scholar
8 Singer, I.L. and Wandass, J. H., Structure-Property Relationships in Surface-Modified Ceramics. Edited by McHargue, C. J. (Kluwer Academic Publishers, 1989) p. 199.Google Scholar
9 Du, H., Yang, Z., Libera, M., Jacobson, D., Wang, Y. C. and Davis, R. F., J. Amer. Ceram. Soc. 76, 330 (1993).Google Scholar
10 Du, H., Final Report (National Science Foundation, 1994).Google Scholar
11 Ion Beam Profile Code, Version 3.20, Implant Science Corp. 1992.Google Scholar
12 Bohn, H.G., Williams, J.M., Mchargue, C.J. and Begun, G.M., J. Mater. Res. 2, 107 (1987).Google Scholar
13 McHargue, C.J. and Williams, J.M., Nuclear Instru. Methods B80/81 889(1993).Google Scholar
14 Heera, V., Kogler, R., Skorupa, W. and Stoemenos, J., in press.Google Scholar
15 JANAF Thermochemical Tables, 2nd Ed. Edited by D.R Stull and H. Prophet et al. (U.S. Dept. of Commerce, National Bureau of Standards, Washington DC, 1970).Google Scholar
16 Du, H., Libera, M., Yang, Z., Lai, P.J., Jacobson, D., Wang, Y. C. and Davis, R. F., Appl. Phys. Lett. 62, 423 (1993).Google Scholar
17 Deamaley, G., Nuclaer Instruments and Methods, 182, 899 (1981).Google Scholar