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The Effects of Composition on the Spectral Loss Characteristics of SiGe Planar Waveguide Structures

Published online by Cambridge University Press:  25 February 2011

Yang Zuoya ,
B. L. Weiss ,
G. Shao  and
F. Namavar
Yang Zuoya
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, Surrey, GU2 5XH, UK
B. L. Weiss
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, Surrey, GU2 5XH, UK
G. Shao
Affiliation:
University of Surrey, Department of Materials Science and Engineering, Guildford, Surrey, GU2 5XH, UK
F. Namavar
Affiliation:
Spire Corporation, Patriots Park, Bedford, Massachusetts 01730, USA
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Abstract

The effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 461
Copyright
Copyright © Materials Research Society 1993

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References

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