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Effect of Yb Diffusion Barriers on the Properties of In/ n-Hg1−xCdxTe Contacts

Published online by Cambridge University Press:  25 February 2011

Patrick W. Leech ,
Geoffrey K. Reeves ,
Yuan H. Li  and
Martyn H. Kibel
Patrick W. Leech
Affiliation:
Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia.
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institue of Technology, Melbourne, 3001, Victoria, Australia.
Yuan H. Li
Affiliation:
Royal Melbourne Institue of Technology, Melbourne, 3001, Victoria, Australia.
Martyn H. Kibel
Affiliation:
Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia.
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Abstract

The effect of incorporating a Yb diffusion barrier on the electrical and interfacial properties of In/Hg1−xCdxTe contacts has been examined. Measurements of the specific contact resistance, pc, as a function of Yb layer thickness were performed for a series of semiconductor compositions from x = 0.32 to 0.65. Large changes in pc were evident only at x 0.56 and above a Yb thickness of 2.5nm to 6.0nm, this critical level of layer thickness decreasing with x-value. Analytical examination of the interfaces by Auger electron spectroscopy, secondary ion mass spectroscopy and Rutherford backscattering spectrometry has shown a progressive reduction in the extent of In indiffusion with increasing thickness of the Yb interlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 329
Copyright
Copyright © Materials Research Society 1992

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References

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