Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-05T15:58:45.832Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Thermal Processing on the Microstructures and Superconducting Properties of YBa2Cu3Oy

Published online by Cambridge University Press:  28 February 2011

K. Gotoh ,
H. Enomoto ,
K. Iida ,
Y. Takano ,
N. Mori  and
H. Ozaki
K. Gotoh
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
H. Enomoto
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
K. Iida
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
Y. Takano
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
N. Mori
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
H. Ozaki
Affiliation:
Department of Electrical Engineering, Waseda University, Ohkubo 3–4–1, Shinjuku-ku, Tokyo 160, Japan
Get access

Abstract

The effect of thermal processing in the sample preparation of YBa2Cu3Oy has been investigated systematically on microstructures and electrical properties. The grain size was found to grow preferably during the cooling process rather than during the sintering process. The high Tc superconducting phase appears around 500 C in this thermal processing. The annealing experiment shows that the grains still grow at low temperature such as 300 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 99: Symposium AA – High-Temperature Superconductors , 1987 , 265
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bednorz, J.G. and Muller, K.A., Z. Phys. B64. 189 (1986).Google Scholar
2. Wu, M. K., Ashburn, J. R., Torng, C. J., Hor, R. H., Meng, P. L., Gao, L., Huang, Z. J., Wang, Y.Q. and Chu, C.W., Phys. Rev. Lett. 58, 908 (1987).Google Scholar
3. Hikami, S., Hirai, T. and Kagoshima, S., Jpn. J. Appl. Phys. 26, L314 (1987).Google Scholar
4. Izumi, F., Asano, H., Ishigaki, T., Takayama-Moriuchi, E., Uchida, Y., Watanabe, N. and Nishikawa, T., Jpn. J. Appl. Phys. 26, L649 (1987).Google Scholar
5. Cava, R.J., Battlogg, B., van Dover, R.B., Murphy, D.W., Sunshine, S., Siegrist, T., Remeik, J.P., Rietman, E.A., Zahurak, S. and Espinosa, G.P., Phys. Rev. Lett. 58, 1676 (1987).Google Scholar
6. Hatano, T., Matsushita, A., Nakamura, K., Sakka, Y., Matsumoto, T. and Ogawa, K., Jpn. J. Appl. Phys. 26, L721 (1987).Google Scholar
7. Takayama-Moriuchi, E., Uchida, Y., Ishii, M., Tanaka, T. and Kato, K., Jpn. J. Appl. Phys. 26, L1156 (1987).Google Scholar
8. Takagi, Y., Liang, R., Inaguma, Y. and Nakaura, T., Jpn. J. Appl. Phys. 26, L1266 (1987).Google Scholar
9. Nakazawa, Y., Ishikawa, M., Takabatake, T., Koga, K. and Terakura, K., Jpn. J. Appl. Phys. 26, L796 (1987).Google Scholar