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Effect of Plasma Modulation in the Glow Discharge Deposition of Amorphous Silicon Films

Published online by Cambridge University Press:  25 February 2011

G. Bruno ,
P. Capezzuto ,
G. Cicala  and
P. Manodoro
G. Bruno
Affiliation:
Centro di Studio per Ia Chimica dei Plasmi. Dipartimento diChimica-Universita di Bari, Via G. Amendola 173, 70126 Bar, Italy
P. Capezzuto
Affiliation:
Centro di Studio per Ia Chimica dei Plasmi. Dipartimento diChimica-Universita di Bari, Via G. Amendola 173, 70126 Bar, Italy
G. Cicala
Affiliation:
Centro di Studio per Ia Chimica dei Plasmi. Dipartimento diChimica-Universita di Bari, Via G. Amendola 173, 70126 Bar, Italy
P. Manodoro
Affiliation:
Centro di Studio per Ia Chimica dei Plasmi. Dipartimento diChimica-Universita di Bari, Via G. Amendola 173, 70126 Bar, Italy
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Abstract

The plasma deposition of hydrogenated and fluorinated amorphous silicon (a-Si:H,F) and silicon-germanium alloys (a-Si,Ge:H,F) from SiF4-H2 and SiF 4-GeH 4-H2 mixtures, respectively, has been studied in continuous (CW) and modulated wave (MW) r.f. discharges. It has been found that the period and duty cycle of the modulated wave strongly affect the plasma composition, the surface homogeneity and the material properties. The plasma-phase characterization, performed by time resolved optical emission spectroscopy (TR-OES), supplies arguments on the origin of emitting species and on their formation kinetics. It has been found that H* and SiFx are formed by a direct electron impact process involving the same species in the ground state. In addition, the surface homogeneity and some material properties are strongly improved by plasma modulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 289
Copyright
Copyright © Materials Research Society 1991

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References

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