Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:42:14.535Z Has data issue: false hasContentIssue false

Effect of piezoelectric vibration on electrical properties of YSZ film prepared by MOCVD

Published online by Cambridge University Press:  01 February 2011

Hiroshi Masumoto
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980–8577, JAPAN
Takashi Goto
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980–8577, JAPAN
Get access

Abstract

To improve electric properties of ion-conductors at low temperatures, ion-conducting/piezoelectric multifunctional film was prepared. Yttria-stabilized zirconia (YSZ) film as an ion-conducting film was deposited on a MgO substrate by metal-organic chemical vapor deposition (MOCVD). The significant [100] preferred orientation of cubic-YSZ single-phase film c ontaining 8 mol%Y2O3 was obtained at a deposition temperature of 973 K. The film consisted of fine grains of about 400 nm in diameter and had a columnar structure. It was capable of ionic conduction, as shown by the fact that a semicircle and a spike appeared at high and low frequencies, respectively, in the complex impedance measurement. The obtained YSZ thin film was placed on a multilayer piezoelectric actuator composed of seven sheets of a PZT (lead zirconate titanate) system. The effect of piezoelectric vibration on the electric properties of the ion-conducting film was investigated. The impedance value of the YSZ thin film decreased with increasing amplitude of piezoelectric vibration. The electrical conductivity of the YSZ thin film at 353 K, with an applied vibration frequency of 115 kHz and a voltage of 40 V, was about 2×10-4 Sm-1. The value of this conductivity was 103 times greater than that without vibration. Vibration by the actuator was thus suggested to improve the ionic conduction of the YSZ thin film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakazawa, M., Asada, A. and Osanai, H., IEEE Denshi Tokyo 23, 155157 (1984).Google Scholar
2. Inoue, T., Seki, N., Eguchi, K. and Arai, H., J. Electrochem. Soc. 137, 25232527 (1990).10.1149/1.2086980Google Scholar
3. Badwal, S. J. S., J. Electroanal. Chem. 146, 425429 (1983).10.1016/S0022-0728(83)80602-0Google Scholar
4. Heyne, L., Measurement of Oxygen, (North Holland, Pub. Co., 1976) pp. 6569.Google Scholar
5. Asada, A., Isono, Y., Nakasawa, M., Proc. 4th Sensor Symposium, (The Institute of Electrical Engineers of Japan, 1984), pp. 285292.Google Scholar
6. Saji, K., Takahashi, H., Kondo, H., Takeuchi, T. and Igarashi, I., Proc. 4th Sensor Symposium, (The Institute of Electrical Engineers of Japan, 1984) pp. 147151.Google Scholar
7. Yamamura, H., Utsunomiya, N., Mori, T. and Atake, T., Solid State Ionics 107, 185189 (1998).10.1016/S0167-2738(97)00534-1Google Scholar
8. Suzuki, K., Kubo, M., Oumi, Y., Miura, R., Takabe, H., Fahmi, A., Chatterjee, A., Teraishi, K. and Miyamoto, A., Appl. Phys. Lett. 73, 15021504 (1998).10.1063/1.122186Google Scholar
9. Thiele, E. S., Wang, L. S., Mason, T. O. and Barnett, S. A., J. Vac. Sci. Technol. A 9, 30543060 (1991).10.1116/1.577172Google Scholar
10. Sakurai, C., Fukui, T. and Okuyama, M., J. Am. Ceram. Soc. 76, 10611064 (1993).10.1111/j.1151-2916.1993.tb05337.xGoogle Scholar
11. Filal, M., Petot, C., Mokchah, M., Chateau, C. and Carpentier, J. L., Solid State Ionics 80, 2735 (1995).10.1016/0167-2738(95)00137-UGoogle Scholar
12. Garcia, G., Figueras, A., Casado, J., Llibre, J., Mokchah, M., Petot-Ervas, G. and Calderer, J., Thin Solid Films 317, 241244 (1998).10.1016/S0040-6090(97)00622-6Google Scholar
13. Nakagawa, K., Yoshioka, H., Kuroda, H., and Ishida, M., Solid State Ionics 35, 249255 (1989).10.1016/0167-2738(89)90304-4Google Scholar
14. Savvides, N. and Window, B., J. Vac. Sci. Technol. 4, 504508 (1986).10.1116/1.573869Google Scholar