Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-27T14:52:53.772Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In2O3 Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  01 February 2011

A Ghosh ,
R K Gupta ,
P K Kahol  and
K Ghosh
A Ghosh
Affiliation:
[email protected], Missouri State University, Physics, Astronomy, & Materials Science, Springfield, Missouri, United States
R K Gupta
Affiliation:
[email protected], United States
P K Kahol
Affiliation:
[email protected], United States
K Ghosh
Affiliation:
[email protected], United States
Get access

Abstract

Thin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on structural, electrical, and magneto-transport properties of these films. Crystalinity of the films increases with the growth temperature. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature behave more like to nanocrystaline. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity and magnetoresistance of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystalinity of the films.

Keywords

ablationelectrical propertiesHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1119: Symposium L – New Materials with High Spin Polarization and Their Applications , 2008 , 1119-L05-13
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kahol, P. K., Gupta, R. K., Ghosh, K., Conference Proceedings, American Institute of Physics, 1063 (2008) 177.Google Scholar
2. Shim, I. B., Kim, C.S., J. Mag. Mag. Mater. 272–276 (2004) e1571.Google Scholar
3. Peleckis, G., Wang, X.L., Dou, S.K., J. Mag. Mag. Mater. 301 (2006)308.Google Scholar
4. Minami, T., MRS Bull. 25 (2000) 38 Google Scholar
5. Gupta, R. K., Ghosh, K., Mishra, S. R., Kahol, P. K., J Optoelectron. Adv. Mater. 9 (2007) 2211.Google Scholar
6. Coutal, C., Azema, A., Roustan, J.C., Thin Solid Films 288 (1996) 248.Google Scholar
7. Philip, J., Theodoropoulou, N., Moodera, J.S., Satpati, B., Appl. Phys. Lett. 85 (2004)777.Google Scholar
8. Kim, H.S., Ji, S.H., Hong, S.K., Kim, D., Ihm, Y.E., Choo, W.K., Solid State Commun. 137 (2006) 41.Google Scholar
9. Zhou, X.D. and Huebner, W., Appl. Phys. Lett. 79 (2001) 351 Google Scholar
10. Van der Pauw, L.J., Philips Res. Rep. 13 (1958) 1.Google Scholar
11. Bhosle, V., Tiwari, A., Narayan, J., J. Appl. Phys. 100 (2006) 033713.Google Scholar
12. Rokhinson, L. P., Lyanda-Geller, Y., Ge, Z., Shen, S., Liu, X., Dobrowolska, M. and Furdyna, J. K., Phys. Rev. B 76, 161201(R) (2007).Google Scholar