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Effect Of Grain Size, Morphology and Deposition Temperature on Cu(InGa)Se2 Solar Cells

Published online by Cambridge University Press:  21 March 2011

William N. Shafarman  and
Jie Zhu
William N. Shafarman
Affiliation:
Institute of Energy ConversionUniversity of DelawareNewark, DE 19716, USA
Jie Zhu
Affiliation:
Institute of Energy ConversionUniversity of DelawareNewark, DE 19716, USA
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Abstract

Cu(InGa)Se2 films have been deposited by multisource elemental evaporation at substrate temperatures from 550 to 400°C to determine the effect of temperature on grain size and morphology and on solar cell performance. Films were deposited with different flux profiles to compare cases where a copper selenide phase is formed during different stages of growth or not at all. The grain size and surface area of the films are determined by analysis of atomic force microscope images. With the Cu-rich growth, the mean lateral grain area decreases from 1.8 to 0.3 μm2 as substrate temperature decreases. Device efficiency decreases with the lower temperature but cannot be simply attributed to changes in grain size, surface area, or the availability of sodium which diffused from the glass substrate. Instead the decrease in open circuit voltage and fill factor are attributed to a greater density of intra-grain trap states in the Cu(InGa)Se2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H2.3
Copyright
Copyright © Materials Research Society 2001

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References

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