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A Dual Frequency Tri-Electrode System for Etching Polysilicon

Published online by Cambridge University Press:  21 February 2011

J. Keller ,
L. Giffen ,
D. Uchimura  and
G. Corn
J. Keller
Affiliation:
Tegal Corporation, 11 Digital Drive, Novato, California 94947
L. Giffen
Affiliation:
Tegal Corporation, 11 Digital Drive, Novato, California 94947
D. Uchimura
Affiliation:
Tegal Corporation, 11 Digital Drive, Novato, California 94947
G. Corn
Affiliation:
Tegal Corporation, 11 Digital Drive, Novato, California 94947
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Abstract

The etching of polysilicon and polycide films requires both profile control and selectivity control. The use of a dual frequency tri-electrode system combined with a chlorine based chemistry have produced useful results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 243
Copyright
Copyright © Materials Research Society 1985

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References

1. Pogge, H.B., Bondur, J.A., and Burkhardt, P.J., J. Electrochem. Soc., 3125, 125, 470C (1978).Google Scholar
2. Schwartz, G.C. and Schaible, P.M., J. Vac. Sci. Technol., 16,2,410 (1979).Google Scholar