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Dopant Activation in bulk germanium and Germanium-on-Insulator

Published online by Cambridge University Press:  26 February 2011

Y.-L. Chao ,
S. Prussin ,
J. C. S. Woo  and
R. Scholz
Y.-L. Chao
Affiliation:
University of California, Los Angeles, Department of Electrical Engineering, USA
S. Prussin
Affiliation:
University of California, Los Angeles, Department of Electrical Engineering, USA
J. C. S. Woo
Affiliation:
University of California, Los Angeles, Department of Electrical Engineering, USA
R. Scholz
Affiliation:
Max-Planck Institute of Microstructure Physics, Halle/Saale, Germany
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Abstract

High levels of electrical activation of both p- and n-type dopants are realized by pre-amorphization implantation (PAI) in bulk germanium wafers and germanium-on-insulator (GOI) substrates. In bulk germanium, p-type dopant yields an electrical activated concentration of 1.5×1020 /cm3 after a 400°C rapid thermal annealing (RTA), which is one order higher than obtained for samples without PAI. N-type dopants also show comparable improvement as 1×1020 /cm3 after 600°C RTA. Both results are the highest ever being reported and are sufficient for advanced CMOS applications. PAI was also employed in dopant activation for GOI substrates. Carrier concentrations of 6×1020 /cm3 and 5×1019 /cm3 were observed for p- and n-type dopants respectively after identical RTA conditions as for bulk germanium counterparts. Hydrogen incorporated in GOI wafers which were prepared by Smart-Cut™ approach may be responsible for the discrepancy of activated concentrations between bulk germanium and GOI. Nevertheless, PAI shows the promise of dopant activation in germanium and can be readily adopted in current CMOS processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.18
Copyright
Copyright © Materials Research Society 2005

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References

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