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Dissociative Chemisorption at Hyperthermal Energies: Benchmark Studies in Group IV Systems

Published online by Cambridge University Press:  21 February 2011

L.-Q. Xia ,
M. E. Jones ,
N. Maity ,
S. E. Roadman  and
J. R. Engstrom†
L.-Q. Xia
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853 USA
M. E. Jones
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853 USA
N. Maity
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853 USA
S. E. Roadman
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853 USA
J. R. Engstrom†*
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853 USA
*
Address correspondence to this author. Electronic mail: [email protected]
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Abstract

We present a review of our recent work concerning supersonic molecular beam scattering of thin film precursors from the Si(100) and Si(111) surfaces. Both SiH4 and Si2H6 exhibit translationally activated dissociation channels at sufficiently high incident kinetic energies, (E┴) 0.5 eV. the dominant variables under our reaction conditions are the incident kinetic energy and the angle of incidence, whereas mean internal energy and substrate temperature play relatively minor roles. the former two variables couple to produce a universal relationship between the reaction probability and a scaled kinetic energy given by (E┴) = Eі[(l-Δ)cos2θі + 3Δsin2θі], where θі is the angle of incidence, a is a corrugation parameter, and 0 ≤ Δ ≤ 1. IN addition to the reaction probability, the reaction mechanism for Si2H6 is also dependent upon incident kinetic energy and surface structure, where a SiH4(g) production channel is observed on the Si(111)-(7x7) surface at low to moderate incident kinetic energies. the reactions of SiH3CH3 and PH3 provide convenient comparative examples. Methylsilane, reacting on a β-SiC surface, exhibits a translationally activated dissociation channel, similar to what is observed for SiH4 and Si2H6. Phosphine, on the other hand, exhibits the characteristics of trapping, precursor-mediated dissociative chemisorption. these results act to underscore the important role played by the frontier orbital topology, even at hyperthermal incident kinetic energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 221
Copyright
Copyright © Materials Research Society 1995

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References

1 Eres, D., Lowndes, D. H., and Tischler, J. Z., Appl. Phys. Lett. 55, 1008 (1989).Google Scholar
2 See, e.g., Atomic and Molecular Beam Methods, Volume 1, Scoles, G., Ed. (Oxford, New York, 1988) and References therein.Google Scholar
3 Engstrom, J. R., Hansen, D. A., Furjanic, M. J. and Xia, L.-Q., J. Chem Phys. 99, 4051 (1993).Google Scholar
4 Engstrom, J. R., Xia, L.-Q., Furjanic, M. J. and Hansen, D. A., Appl. Phys. Lett. 63, 1821 (1993).Google Scholar
5 Xia, L.-Q., and Engstrom, J. R., J. Chem. Phys. 101, 5329 (1994).Google Scholar
6 Jones, M. E., Xia, L.-Q., Maity, N., and Engstrom, J. R., Chem. Phys. Lett. 229, 401 (1994).Google Scholar
7 Maity, N., L.-Q. Xia and Engstrom, J. R., Appl. Phys. Lett. 66, 1909 (1995).Google Scholar
8 Xia, L.-Q., Jones, M. E., Maity, N. and Engstrom, J. R., J. Chem. Phys. 103 (in press).Google Scholar
9 Xia, L.-Q., Jones, M. E., N. Maity and Engstrom, J. R. (submitted for publication).Google Scholar
10 King, D. A. and Wells, M. G., Surface Sci. 29, 454 (1972).Google Scholar
11 Ukraintsev, V. A. and Harrison, I., J. Chem. Phys. 101, 1564 (1994).Google Scholar