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Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes
Published online by Cambridge University Press: 15 February 2011
Abstract
The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.
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- Copyright © Materials Research Society 1995
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