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Dependence of Steady-State Defect Density in Hydrogenated Amorphous Silicon on Carrier Generation Rate Studied Over a Wide Range

Published online by Cambridge University Press:  01 January 1993

Nobuhiro Hata ,
Gautam Ganguly  and
Akihisa Matsuda
Nobuhiro Hata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
Gautam Ganguly
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
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Abstract

Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8 x 1021 to 2.4 × 1023 cm-3 s-1, while the illumination temperature was kept at 30 °C or at 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 577
Copyright
Copyright © Materials Research Society 1993

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