Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:01:17.726Z Has data issue: false hasContentIssue false
  • English
  • Français

The Density-of-State Distribution in Undoped a-Si:H and a-SiGe:H Determined by Heterojunctions with c-Si

Published online by Cambridge University Press:  26 February 2011

Hideharu Matsuura  and
Kazunobu Tanaka
Hideharu Matsuura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN
Kazunobu Tanaka
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN
Get access

Abstract

A novel technique has been proposed for determining the density-of-state (DOS) distribution in the mobility gap of highly resistive amorphous semiconductors, using amorphous/crystalline heterojunction structures. This technique has been tested and applied on undoped a-Si:H and a-SiGe:H films, covering the optical gap (E0 ) range of 1.30 to 1.76 eV. For undoped a-Si:H with E0 =1.76 eV, the peak of the midgap DOS distribution has been locatedst 0.85 eV below the conduction band edge, EC , with a value of 5.6×1015 cm-3 eV-1 . For undoped a-SiGe:H (E0 =1.55 eV) the same has been obtained 0.71 eV below EC with a magnitude of 7.9×1016 cm-3 eV-1. Those midgap states have been found to be correlated with singly-occupied dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 647
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yamasaki, S., Philos. Mag. B 56, 79 (1987).Google Scholar
2. Okushi, H., Philos. Mag. B 52, 33 (1985).Google Scholar
3. Mackenzie, K. D., Eggert, J. R., Leopold, D. J., Li, Y. M., Lin, S., and Paul, W., Phys. Rev. B 31, 2198 (1985).Google Scholar
4. Skumanich, A., Frova, A., and Amer, N. M., Solid State Commun. 54, 597 (1985).CrossRefGoogle Scholar
5. Aljishi, S., Smith, Z E., Slobodin, D., Kolodzey, J., Chu, V., Schwarz, R., and Wagner, S. in Materials Issues in Amorphous-Semiconductor Technology, edited by Adler, D., Hamakawa, Y., and Madan, A. (Mater. Res. Soc. Proc. 70, Pittsburgh, PA 1986) pp. 269–274.Google Scholar
6. Tsutsumi, Y., Sakata, S., Abe, K., Nitta, Y., Okamoto, H., and Hamakawa, Y., J. Non-Cryst. Solids 97&98, 1063 (1987).CrossRefGoogle Scholar
7. Matsuura, H., Okuno, T., Okushi, H., and Tanaka, T., J. Appl. Phys. 55, 1012 (1984).CrossRefGoogle Scholar
8. Matsuura, H., submitted to J. Appl. Phys.Google Scholar
9. Matsuda, A., Koyama, M., Ikuchi, N., Imanishi, Y., and Tanaka, K., Jpn. J. Appl. Phys. 25, L54 (1986).Google Scholar
10. Matsuura, H. and Okushi, H., J. Appl.. Phys. 62, 2871 (1987).Google Scholar
11. Aljishi, S., Chu, V., Smith, Z E., Shen, D. S., Conde, J. P., Slobodin, D., Kolodzey, J., Wagner, S., J. Non-Cryst. Solids 97&98, 1023 (1987).CrossRefGoogle Scholar