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Defect Analysis of Silicon Irradiated by Pulsed Ion Beams

Published online by Cambridge University Press:  15 February 2011

Siegfried Mader
Affiliation:
IBM General Technology Division, Hopewell Junction, New York
Wei-Kan Chu
Affiliation:
IBM General Technology Division, Hopewell Junction, New York
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Abstract

Silicon wafers with (001), (011), and (111) orientations were irradiated with pulsed Ba beams that caused shallow surface melting. Upon resolidification the dislocations are trapped with configurations which are characteristically different for each orientation. A novel feature are dislocations with a [100] Burgers vectors. The dislocations accommodate part of the thermal misfit between substrate and solidifying layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Hodgson, R. T. et al. , Appl. Phys. Lett. 37, 187 (1980).CrossRefGoogle Scholar
2. Hirth, J. P. and Lothe, J., Theory of Dislocations, (McGraw-Hill Book Company, New York 1968).Google Scholar
3. Chu, W. K. et al. , 9thInt. Conf. on Atomic Collisions in Solids, Lyon, France (1981).Google Scholar
4. Baeri, P. et al. , J. AppI. Phys. 50, 788 (1979).Google Scholar
5. Matthews, J. W., Epitaxial Growth (Academic Press, New York 1975) Chapter 8.Google Scholar
6. Cahn, J. W. et al. , in Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S. eds. (Academic Press, New York 1980) p. 89.Google Scholar