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Defect Analysis of Silicon Irradiated by Pulsed Ion Beams
Published online by Cambridge University Press: 15 February 2011
Abstract
Silicon wafers with (001), (011), and (111) orientations were irradiated with pulsed Ba beams that caused shallow surface melting. Upon resolidification the dislocations are trapped with configurations which are characteristically different for each orientation. A novel feature are dislocations with a [100] Burgers vectors. The dislocations accommodate part of the thermal misfit between substrate and solidifying layer.
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- Research Article
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- Copyright © Materials Research Society 1982
References
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