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Dark Current Spectroscopy Of Metals In Silicon

Published online by Cambridge University Press:  15 February 2011

William C. Mccolgin ,
James P. Lavine  and
Charles V. Stancampiano
William C. Mccolgin
Affiliation:
Eastman Kodak Company, Microelectronics Technology Division, Rochester, NY 14650–2008
James P. Lavine
Affiliation:
Eastman Kodak Company, Microelectronics Technology Division, Rochester, NY 14650–2008
Charles V. Stancampiano
Affiliation:
Eastman Kodak Company, Microelectronics Technology Division, Rochester, NY 14650–2008
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Abstract

Dark current spectroscopy (DCS) is used to identify the signature of metals that generate dark or leakage current in silicon image sensors. Individual metal atoms or defects are detected by DCS on a pixel-by-pixel basis. DCS is applied here to show how the number of electrically active iron atoms in a pixel changes with light and with low-temperature anneals. The measurements explore the dissociation and association of iron-boron pairs and the diffusion of iron near room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 187
Copyright
Copyright © Materials Research Society 1997

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References

1. Benton, J. L., Stolk, P. A., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Ha, N. T., Haynes, T. E., and Myers, S. M., J. Appl. Phys. 80, 3275 (1996).Google Scholar
2. McColgin, W. C., Lavine, J. P., and Stancampiano, C. V., in Defect and Impurity Engineered Semiconductors and Devices, edited by Ashok, S., Chevallier, J., Akasaki, I., Johnson, N. M., and Sopori, B. L. (Mater. Res. Soc. Proc. 378, Pittsburgh, PA, 1995) pp. 713–724.Google Scholar
3. McColgin, W. C., Lavine, J. P., Kyan, J., Nichols, D. N., and Stancampiano, C. V., Tech. Dig. IEDM, 113 (1992).Google Scholar
4. Kimerling, L. C. and Benton, J. L., Physica 116B, 297 (1983).Google Scholar
5. Okada, Y., Okigawa, M., Kazui, K., Kitamura, Y., Furusawa, T., Optoelectronics 6, 231 (1991).Google Scholar
6. McColgin, W. C., Lavine, J. P., Kyan, J., Nichols, D. N., Russell, J. B., and Stancampiano, C. V., in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by Ashok, S., Chevallier, J., Sumino, K., and Weber, E. (Mater. Res. Soc. Proc. 262, Pittsburgh, PA, 1992) pp. 769–774.Google Scholar
7. McGrath, R. D., Doty, J., Lupino, G., Ricker, G., and Vallerga, J., IEEE Trans. Electron Devices ED–34, 2555 (1987).Google Scholar
8. Zoth, G. and Bergholz, W., J. Appl. Phys. 67, 6764 (1990).Google Scholar
9. Weber, E. R., Appl. Phys. A 30, 1 (1983).Google Scholar
10. Koveshnikov, S. V. and Rozgonyi, G. A., Appl. Phys. Lett. 66, 860 (1995).Google Scholar